Part Details for STW50NB20 by STMicroelectronics
Results Overview of STW50NB20 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STW50NB20 Information
STW50NB20 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW50NB20
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,50A I(D),TO-247 | 19 |
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$3.0000 / $6.0000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for STW50NB20
STW50NB20 CAD Models
STW50NB20 Part Data Attributes
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STW50NB20
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW50NB20
STMicroelectronics
50A, 200V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW50NB20
This table gives cross-reference parts and alternative options found for STW50NB20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW50NB20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STW50NB20 vs IPB80N06S2LH5ATMA1 |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STW50NB20 vs NDB606BEL |
| 2SK3581-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | STW50NB20 vs 2SK3581-01L |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | STW50NB20 vs NP82N055NUG-S18-AY |
| IRFS650B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | STW50NB20 vs IRFS650B |
| PHB145NQ06T | NXP Semiconductors | Check for Price | 75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | STW50NB20 vs PHB145NQ06T |
| NDB705AEL | Texas Instruments | Check for Price | 75A, 50V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STW50NB20 vs NDB705AEL |
| NDU406AL | Texas Instruments | Check for Price | 15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | STW50NB20 vs NDU406AL |
| NDU406A | National Semiconductor Corporation | Check for Price | TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power | STW50NB20 vs NDU406A |
| NDP505AE | National Semiconductor Corporation | Check for Price | TRANSISTOR 26 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | STW50NB20 vs NDP505AE |
STW50NB20 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
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The gate driver selection depends on the specific application requirements, such as voltage, current, and switching frequency. STMicroelectronics recommends using a gate driver with a high current capability, such as the STGAP2SiCS or the L6385, and ensuring that it is compatible with the STW50NB20's gate-source voltage and current ratings.
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The maximum allowed junction temperature for the STW50NB20 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for optimal reliability and performance.
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To ensure EMC, follow the guidelines in the application note AN5046, which includes recommendations for PCB layout, component selection, and shielding. Additionally, consider using a common-mode choke and a Y-capacitor to filter out electromagnetic interference (EMI).
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For high-power applications, a forced-air cooling system or a liquid cooling system is recommended to maintain a safe junction temperature. The application note AN5046 provides guidelines for designing an effective cooling system, including heat sink selection and thermal interface material recommendations.