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Part Details for STP80NF55-06FP by STMicroelectronics
Results Overview of STP80NF55-06FP by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STP80NF55-06FP Information
STP80NF55-06FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP80NF55-06FP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70391389
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RS | STP80NF55-06FP N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-220FP Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$2.6100 / $3.6200 | RFQ |
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STMicroelectronics | N-channel 55 V, 5 mOhm, 80 A TO-220FP STripFET(TM) II Power MOSFET COO: China RoHS: Compliant Min Qty: 1 | 675 |
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$1.7400 / $2.9000 | Buy Now |
Part Details for STP80NF55-06FP
STP80NF55-06FP CAD Models
STP80NF55-06FP Part Data Attributes
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STP80NF55-06FP
STMicroelectronics
Buy Now
Datasheet
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STP80NF55-06FP
STMicroelectronics
N-channel 55 V, 5 mOhm, 80 A TO-220FP STripFET(TM) II Power MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STP80NF55-06FP Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP80NF55-06FP is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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The recommended gate drive voltage for the STP80NF55-06FP is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STP80NF55-06FP from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
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The maximum allowed current for the STP80NF55-06FP is 80A, with a maximum pulsed current of 160A.