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Part Details for STP80NF55-06 by STMicroelectronics
Results Overview of STP80NF55-06 by STMicroelectronics
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STP80NF55-06 Information
STP80NF55-06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP80NF55-06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34X2879
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Newark | Mosfet Transistor, N Channel, 80 A, 55 V, 6.5 Mohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP80NF55-06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 556 |
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$1.1200 / $2.6500 | Buy Now |
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DISTI #
497-2774-5-ND
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DigiKey | MOSFET N-CH 55V 80A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
775 In Stock |
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$1.4750 / $3.4000 | Buy Now |
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DISTI #
STP80NF55-06
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP80NF55-06) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$1.4048 / $1.4937 | Buy Now |
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DISTI #
511-STP80NF55-06
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Mouser Electronics | MOSFETs N-Ch 55 Volt 80 Amp RoHS: Compliant | 857 |
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$1.4700 / $3.1700 | Buy Now |
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DISTI #
E02:0323_00044298
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Arrow Electronics | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2508 | Europe - 2103 |
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$0.8375 / $3.2014 | Buy Now |
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DISTI #
V99:2348_18461644
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Arrow Electronics | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2347 | Americas - 800 |
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$1.5750 / $2.2330 | Buy Now |
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DISTI #
V36:1790_06564905
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Arrow Electronics | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2347 | Americas - 390 |
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$1.4100 | Buy Now |
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STMicroelectronics | N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET COO: Singapore RoHS: Compliant Min Qty: 1 | 857 |
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$1.6800 / $3.2000 | Buy Now |
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DISTI #
7917461
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Verical | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 7 Package Multiple: 1 | Americas - 2100 |
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$0.8379 / $3.1230 | Buy Now |
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DISTI #
73595783
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Verical | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 4 Package Multiple: 1 Date Code: 2347 | Americas - 800 |
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$1.6290 | Buy Now |
Part Details for STP80NF55-06
STP80NF55-06 CAD Models
STP80NF55-06 Part Data Attributes
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STP80NF55-06
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP80NF55-06
STMicroelectronics
N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 210 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP80NF55-06
This table gives cross-reference parts and alternative options found for STP80NF55-06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NF55-06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP80NF55-06 vs IPB80N06S2LH5ATMA1 |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP80NF55-06 vs NDB606BEL |
| 2SK3581-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | STP80NF55-06 vs 2SK3581-01L |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | STP80NF55-06 vs NP82N055NUG-S18-AY |
| IRFS650B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | STP80NF55-06 vs IRFS650B |
| PHB145NQ06T | NXP Semiconductors | Check for Price | 75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | STP80NF55-06 vs PHB145NQ06T |
| NDB705AEL | Texas Instruments | Check for Price | 75A, 50V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP80NF55-06 vs NDB705AEL |
| NDU406AL | Texas Instruments | Check for Price | 15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | STP80NF55-06 vs NDU406AL |
| NDU406A | National Semiconductor Corporation | Check for Price | TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power | STP80NF55-06 vs NDU406A |
| NDP505AE | National Semiconductor Corporation | Check for Price | TRANSISTOR 26 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | STP80NF55-06 vs NDP505AE |
STP80NF55-06 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP80NF55-06 is -55°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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For minimal EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielded cables for connections.
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No, the STP80NF55-06 is rated for a maximum voltage of 55V. Exceeding this voltage can lead to device failure or reduced lifespan.
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.