-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STP80NF12 by STMicroelectronics
Results Overview of STP80NF12 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STP80NF12 Information
STP80NF12 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP80NF12
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
33R1291
|
Newark | Mosfet, N Channel, 120V, 80A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:120V, Continuous Drain Current Id:40A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP80NF12 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2500 |
|
$1.0900 / $1.1900 | Buy Now |
|
DISTI #
497-6743-5-ND
|
DigiKey | MOSFET N-CH 120V 80A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
742 In Stock |
|
$1.1000 / $2.7000 | Buy Now |
|
DISTI #
STP80NF12
|
Avnet Americas | Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: STP80NF12) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 2000 |
|
$1.0340 | Buy Now |
|
DISTI #
511-STP80NF12
|
Mouser Electronics | MOSFETs N-Ch 120 Volt 80 Amp RoHS: Compliant | 885 |
|
$1.1000 / $2.3000 | Buy Now |
|
DISTI #
E02:0323_00211954
|
Arrow Electronics | Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2510 | Europe - 6900 |
|
$1.0578 / $2.3407 | Buy Now |
|
|
STMicroelectronics | N-CHANNEL 120V-0.013 OHM-80A TO-220 STripFET II MOSFET COO: China RoHS: Compliant Min Qty: 1 | 885 |
|
$1.2000 / $2.2900 | Buy Now |
|
DISTI #
88037216
|
Verical | Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 8 Package Multiple: 1 Date Code: 2510 | Americas - 6896 |
|
$0.9910 / $2.2983 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,120V V(BR)DSS,80A I(D),TO-220AB | 40 |
|
$1.5095 / $2.4152 | Buy Now |
|
DISTI #
STP80NF12
|
TME | Transistor: N-MOSFET, STripFET™ II, unipolar, 120V, 60A, 300W Min Qty: 1 | 72 |
|
$1.2500 / $2.3600 | Buy Now |
|
|
ComSIT USA | N-CHANNEL 120V-0.013 OHM-80A-TO-220 STRIPFET II POWER MOSFET Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
|
|
RFQ |
Part Details for STP80NF12
STP80NF12 CAD Models
STP80NF12 Part Data Attributes
|
|
STP80NF12
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP80NF12
STMicroelectronics
N-CHANNEL 120V-0.013 OHM-80A TO-220 STripFET II MOSFET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP80NF12
This table gives cross-reference parts and alternative options found for STP80NF12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NF12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP80NF12 vs IPB80N06S2LH5ATMA1 |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STP80NF12 vs NDB606BEL |
| 2SK3581-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | STP80NF12 vs 2SK3581-01L |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | STP80NF12 vs NP82N055NUG-S18-AY |
| IRFS650B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | STP80NF12 vs IRFS650B |
| PHB145NQ06T | NXP Semiconductors | Check for Price | 75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | STP80NF12 vs PHB145NQ06T |
| NDB705AEL | Texas Instruments | Check for Price | 75A, 50V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP80NF12 vs NDB705AEL |
| NDU406AL | Texas Instruments | Check for Price | 15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | STP80NF12 vs NDU406AL |
| NDU406A | National Semiconductor Corporation | Check for Price | TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power | STP80NF12 vs NDU406A |
| NDP505AE | National Semiconductor Corporation | Check for Price | TRANSISTOR 26 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | STP80NF12 vs NDP505AE |
STP80NF12 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the STP80NF12 is -55°C to 150°C.
-
To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V).
-
For optimal thermal performance, use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the heat sink. A copper pour on the PCB can also help to dissipate heat.
-
Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent conditions.
-
The recommended gate drive voltage for the STP80NF12 is typically between 10-15 V, but this may vary depending on the specific application and required switching frequency.