Part Details for STL42N65M5 by STMicroelectronics
Results Overview of STL42N65M5 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STL42N65M5 Information
STL42N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STL42N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13602-1-ND
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DigiKey | MOSFET N-CH 650V 4A PWRFLAT HV Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2913 In Stock |
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$7.8500 / $15.0700 | Buy Now |
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DISTI #
V79:2366_17796135
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Arrow Electronics | Trans MOSFET N-CH Si 650V 34A 4-Pin Power Flat EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1513 | Americas - 2765 |
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$7.3270 | Buy Now |
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DISTI #
26119154
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Verical | Trans MOSFET N-CH Si 650V 34A 4-Pin Power Flat EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1513 | Americas - 2765 |
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$7.3270 | Buy Now |
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DISTI #
STL42N65M5
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Avnet Silica | Trans MOSFET NCH 650V 34A 4Pin Power Flat TR (Alt: STL42N65M5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STL42N65M5
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EBV Elektronik | Trans MOSFET NCH 650V 34A 4Pin Power Flat TR (Alt: STL42N65M5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STL42N65M5
STL42N65M5 CAD Models
STL42N65M5 Part Data Attributes
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STL42N65M5
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STL42N65M5
STMicroelectronics
N-channel 650 V, 0.070 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | 8 X 8 MM, ROHS COMPLIANT, POWERFLAT-5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 950 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.079 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STL42N65M5
This table gives cross-reference parts and alternative options found for STL42N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STL42N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STL21N65M5 | STMicroelectronics | $3.7981 | N-channel 650 V, 175 mOhm typ., 2.7 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package | STL42N65M5 vs STL21N65M5 |
STL42N65M5 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the STL42N65M5 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To achieve the specified switching times, ensure that the gate driver is capable of delivering a high current (typically > 1A) and has a low output impedance. Additionally, use a low-inductance layout and keep the gate-source voltage (Vgs) within the recommended range (typically 10-15V) to minimize switching losses.
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To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, and place the STL42N65M5 near the heat sink or thermal pad. Keep the high-current paths short and use wide traces (at least 1mm) for the drain and source connections. Also, use a common-mode choke or ferrite bead to filter the drain-source voltage.
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Yes, the STL42N65M5 can be used in a synchronous buck converter topology. However, ensure that the dead-time between the high-side and low-side switches is properly controlled to prevent shoot-through currents and reduce EMI. Also, consider using a dedicated synchronous rectifier controller or a high-side driver with built-in dead-time control.
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To protect the STL42N65M5 from overvoltage and overcurrent conditions, use a voltage supervisor or overvoltage protection (OVP) circuit to monitor the drain-source voltage. Also, implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC. Ensure that the protection circuits are fast enough to respond to fault conditions and prevent damage to the device.