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N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STL12N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56Y0979
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Newark | Hv Mosfet Mdmesh |Stmicroelectronics STL12N60M2 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
497-16039-1-ND
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DigiKey | MOSFET N-CH 600V 6.5A POWERFLAT Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.7030 / $2.4400 | Buy Now |
DISTI #
STL12N60M2
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Avnet Americas | Trans MOSFET N-CH 600V 6.5A 8-Pin PowerFLAT T/R - Tape and Reel (Alt: STL12N60M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.6742 / $0.6987 | Buy Now |
DISTI #
511-STL12N60M2
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Mouser Electronics | MOSFETs N-channel 600 V, 0.400 Ohm typ 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV RoHS: Compliant | 1950 |
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$0.7030 / $2.4900 | Buy Now |
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STMicroelectronics | N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package COO: China RoHS: Compliant Min Qty: 1 | 1950 |
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$0.8600 / $2.4400 | Buy Now |
DISTI #
STL12N60M2
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IBS Electronics | STL12N60M2 by ST MICROELECTRONICS is a 600V, 12A N-channel MOSFET featuring low gate charge, fast switching, and low on-resistance, ideal for high-efficiency power conversion applications. Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.9035 | Buy Now |
DISTI #
STL12N60M2
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Avnet Silica | Trans MOSFET NCH 600V 65A 8Pin PowerFLAT TR (Alt: STL12N60M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STL12N60M2
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EBV Elektronik | Trans MOSFET NCH 600V 65A 8Pin PowerFLAT TR (Alt: STL12N60M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STL12N60M2
STMicroelectronics
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Datasheet
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STL12N60M2
STMicroelectronics
N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum operating junction temperature of the STL12N60M2 is 150°C.
Yes, the STL12N60M2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.
To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Avoid using vias or narrow traces, and keep the MOSFET as close to the gate driver as possible.
No, the STL12N60M2 is not suitable for linear mode operation due to its high power dissipation and limited thermal performance in linear mode.