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Part Details for STH80N10F7-2 by STMicroelectronics
Results Overview of STH80N10F7-2 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
STH80N10F7-2 Information
STH80N10F7-2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH80N10F7-2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70520622
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RS | STH80N10F7-2 N-channel MOSFET Transistor, 80 A, 100 V, 3-Pin H2PAK-2 Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$1.3500 / $1.9100 | RFQ |
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STMicroelectronics | N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package COO: China RoHS: Compliant Min Qty: 1 | 1862 |
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$1.1000 / $1.9600 | Buy Now |
Part Details for STH80N10F7-2
STH80N10F7-2 CAD Models
STH80N10F7-2 Part Data Attributes
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STH80N10F7-2
STMicroelectronics
Buy Now
Datasheet
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STH80N10F7-2
STMicroelectronics
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | H2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA LOW-ON RESISTANCE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STH80N10F7-2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STH80N10F7-2 is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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The recommended gate drive voltage for the STH80N10F7-2 is between 10V and 15V, with a maximum voltage of 20V.
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To protect the STH80N10F7-2 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
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The maximum allowable current for the STH80N10F7-2 is 80A, with a maximum pulsed current of 160A.