Datasheets
STGP6NC60HD by: STMicroelectronics

N-channel 600 V, 7 A very fast IGBT

Part Details for STGP6NC60HD by STMicroelectronics

Results Overview of STGP6NC60HD by STMicroelectronics

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STGP6NC60HD Information

STGP6NC60HD by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGP6NC60HD

Part # Distributor Description Stock Price Buy
DISTI # 26M3561
Newark Igbt, To-220, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:2.5V, Power Dissipation:56W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:-, Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP6NC60HD RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1784
  • 1 $1.0500
  • 10 $1.0300
  • 100 $1.0200
  • 500 $0.9020
  • 1,000 $0.8700
  • 3,000 $0.8370
  • 10,000 $0.8100
$0.8100 / $1.0500 Buy Now
DISTI # 497-5122-5-ND
DigiKey IGBT 600V 15A TO-220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 1431
In Stock
  • 1 $1.9300
  • 50 $0.9294
  • 100 $0.8314
  • 500 $0.6593
  • 1,000 $0.6040
  • 2,000 $0.5574
  • 5,000 $0.5071
  • 10,000 $0.5016
$0.5016 / $1.9300 Buy Now
DISTI # STGP6NC60HD
Avnet Americas Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Tube 2000
  • 1 $0.4715
  • 10 $0.4675
  • 30 $0.4595
  • 50 $0.4515
  • 100 $0.4434
$0.4434 / $0.4715 Buy Now
DISTI # 511-STGP6NC60HD
Mouser Electronics IGBTs N-channel 600 V, 7 A very fast IGBT RoHS: Compliant 2429
  • 1 $0.7300
  • 10 $0.7280
  • 100 $0.7140
  • 500 $0.6000
  • 1,000 $0.5680
  • 5,000 $0.5070
  • 10,000 $0.5010
$0.5010 / $0.7300 Buy Now
DISTI # E02:0323_00210117
Arrow Electronics Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2122 Europe - 794
  • 1 $0.5302
  • 10 $0.5290
  • 100 $0.5268
  • 500 $0.5143
$0.5143 / $0.5302 Buy Now
STMicroelectronics N-channel 600 V, 7 A very fast IGBT RoHS: Compliant Min Qty: 1 2424
  • 1 $0.7200
  • 10 $0.7100
  • 100 $0.7000
  • 500 $0.5900
$0.5900 / $0.7200 Buy Now
DISTI # 73485452
Verical Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 11 Package Multiple: 1 Date Code: 2122 Americas - 792
  • 11 $0.5311
  • 100 $0.5290
  • 500 $0.5164
$0.5164 / $0.5311 Buy Now
Future Electronics STGP6NC60HD Series 600 V 7 A N-Channel Very Fast PowerMESH IGBT - TO-220 Min Qty: 50 Package Multiple: 50 2000
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  • 50 $0.5250
  • 200 $0.5100
  • 750 $0.4950
  • 2,000 $0.4850
  • 5,000 $0.4700
$0.4700 / $0.5250 Buy Now
DISTI # STGP6NC60HD
TME Transistor: IGBT, 600V, 15A, 56W, TO220AB Min Qty: 1 203
  • 1 $0.9500
  • 25 $0.7300
  • 50 $0.6800
  • 100 $0.6700
$0.6700 / $0.9500 Buy Now
DISTI # STGP6NC60HD
Avnet Silica Trans IGBT Chip NCH 600V 15A 3Pin3Tab TO220 Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 27450
Buy Now
DISTI # STGP6NC60HD
EBV Elektronik Trans IGBT Chip NCH 600V 15A 3Pin3Tab TO220 Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 225000
Buy Now
Vyrian Transistors 28696
RFQ
Win Source Electronics N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT 1200
  • 75 $0.8196
  • 175 $0.6726
  • 270 $0.6516
  • 370 $0.6306
  • 475 $0.6095
  • 635 $0.5465
$0.5465 / $0.8196 Buy Now

Part Details for STGP6NC60HD

STGP6NC60HD CAD Models

STGP6NC60HD Part Data Attributes

STGP6NC60HD STMicroelectronics
Buy Now Datasheet
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STGP6NC60HD STMicroelectronics N-channel 600 V, 7 A very fast IGBT
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 15 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.75 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 56 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 222 ns
Turn-on Time-Nom (ton) 17.3 ns

Alternate Parts for STGP6NC60HD

This table gives cross-reference parts and alternative options found for STGP6NC60HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGP6NC60HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
HGTP12N60C3D onsemi $3.0666 600V, UFS IGBT, TO-220-3, 800-TUBE STGP6NC60HD vs HGTP12N60C3D
IRGBC30FD2 International Rectifier Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN STGP6NC60HD vs IRGBC30FD2
SGH40N60UFD Samsung Semiconductor Check for Price Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN STGP6NC60HD vs SGH40N60UFD
HGTP7N60A4D Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN STGP6NC60HD vs HGTP7N60A4D
IRGPC40F International Rectifier Check for Price Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN STGP6NC60HD vs IRGPC40F
IXGH28N60BD1 IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN STGP6NC60HD vs IXGH28N60BD1
SGP15N60 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STGP6NC60HD vs SGP15N60
IRGPC30U International Rectifier Check for Price Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN STGP6NC60HD vs IRGPC30U
MGW21N60ED onsemi Check for Price 31A, 600V, N-CHANNEL IGBT, TO-247AE, CASE 340K-01, 3 PIN STGP6NC60HD vs MGW21N60ED
IRG4BC30KDPBF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 STGP6NC60HD vs IRG4BC30KDPBF

STGP6NC60HD Related Parts

STGP6NC60HD Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the STGP6NC60HD is 175°C.

  • Yes, the STGP6NC60HD is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.

  • To ensure reliability, it is recommended to derate the power dissipation of the STGP6NC60HD according to the ambient temperature, and to use a suitable heat sink to keep the junction temperature below 150°C.

  • The recommended gate resistor value for the STGP6NC60HD is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.

  • Yes, the STGP6NC60HD can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.

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