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Part Details for STGP4M65DF2 by STMicroelectronics
Results Overview of STGP4M65DF2 by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STGP4M65DF2 Information
STGP4M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGP4M65DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
14AC7540
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Newark | Igbt, Single, 650V, 8A, To-220, Continuous Collector Current:8A, Collector Emitter Saturation Voltage:1.6V, Power Dissipation:68W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGP4M65DF2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1990 |
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$0.6160 / $1.2500 | Buy Now |
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DISTI #
497-17548-ND
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DigiKey | IGBT TRENCH FS 650V 8A TO-220 Min Qty: 1 Lead time: 15 Weeks Container: Tube | Temporarily Out of Stock |
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$0.3854 / $1.6000 | Buy Now |
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DISTI #
STGP4M65DF2
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Avnet Americas | Transistor I GBT N-CH 650V 8A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP4M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.3735 / $0.3902 | Buy Now |
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DISTI #
511-STGP4M65DF2
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Mouser Electronics | IGBTs Trench Gate IGBT M Series 650V 4A RoHS: Compliant | 1937 |
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$0.3850 / $1.0200 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT, M series 650 V, 4 A low loss COO: China RoHS: Compliant Min Qty: 1 | 1937 |
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$0.4400 / $1.0000 | Buy Now |
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DISTI #
STGP4M65DF2
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TME | Transistor: IGBT, 650V, 4A, 68W, TO220AB Min Qty: 1 | 0 |
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$0.4680 / $0.7870 | RFQ |
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DISTI #
STGP4M65DF2
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IBS Electronics | STGP4M65DF2 by STMicroelectronics is a 650V, 4A IGBT with low VCE(sat), optimized for high-speed switching applications, featuring a fast recovery diode, ideal for energy-efficient power systems. Min Qty: 50 Package Multiple: 1 | 0 |
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$0.5135 / $0.5720 | Buy Now |
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DISTI #
STGP4M65DF2
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Avnet Silica | Transistor I GBT NCH 650V 8A 3Pin TO220 Tube (Alt: STGP4M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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DISTI #
STGP4M65DF2
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EBV Elektronik | Transistor I GBT NCH 650V 8A 3Pin TO220 Tube (Alt: STGP4M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | TO-220 IGBT Transistors / Modules ROHS | 49 |
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$1.2508 / $2.0639 | Buy Now |
Part Details for STGP4M65DF2
STGP4M65DF2 CAD Models
STGP4M65DF2 Part Data Attributes
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STGP4M65DF2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP4M65DF2
STMicroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | TO-220AB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 296 ns | |
| Turn-on Time-Nom (ton) | 19.6 ns | |
| VCEsat-Max | 2.1 V |
STGP4M65DF2 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the STGP4M65DF2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To calculate the power dissipation of the STGP4M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) of the package. The formula is: Pd = (Vds x Ids) + (Vgs x Igs) + (Rth x (Tj - Ta)), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, Rth is the thermal resistance, Tj is the junction temperature, and Ta is the ambient temperature.
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The recommended gate drive voltage for the STGP4M65DF2 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide breakdown.
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Yes, the STGP4M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate charge, and parasitic capacitances to ensure reliable operation. It's recommended to use a suitable gate driver and to optimize the PCB layout to minimize parasitic inductances and capacitances.
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To protect the STGP4M65DF2 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. Additionally, consider using a fuse or a current limiter to prevent excessive current flow in case of a fault.