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Part Details for STGF4M65DF2 by STMicroelectronics
Results Overview of STGF4M65DF2 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
STGF4M65DF2 Information
STGF4M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGF4M65DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-16965-ND
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DigiKey | IGBT TRENCH FS 650V 8A TO-220FP Min Qty: 1 Lead time: 15 Weeks Container: Tube |
6 In Stock |
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$0.4006 / $1.6400 | Buy Now |
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DISTI #
STGF4M65DF2
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Avnet Americas | Trans IGBT Chip N 650V 8A 3-Pin TO-220FP Tube - Bulk (Alt: STGF4M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Bulk | 0 |
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$0.3502 / $0.3574 | Buy Now |
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DISTI #
511-STGF4M65DF2
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Mouser Electronics | IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss RoHS: Compliant | 2073 |
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$0.3610 / $1.1500 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT, M series 650 V, 4 A low loss RoHS: Compliant Min Qty: 1 | 2073 |
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$0.4900 / $1.1300 | Buy Now |
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DISTI #
STGF4M65DF2
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TME | Transistor: IGBT, 650V, 4A, 23W, TO220FP Min Qty: 1 | 0 |
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$0.4860 / $0.8170 | RFQ |
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DISTI #
STGF4M65DF2
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IBS Electronics | STGF4M65DF2 by ST MICROELECTRONICS is a 650V, 4A IGBT with low saturation voltage, fast switching, and high efficiency, ideal for motor drives and power conversion applications. Min Qty: 1550 Package Multiple: 1 | 0 |
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$0.4355 / $0.4615 | Buy Now |
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DISTI #
STGF4M65DF2
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Avnet Silica | Trans IGBT Chip N 650V 8A 3Pin TO220FP Tube (Alt: STGF4M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | IGBT TRENCH FS 650V 8A TO220FP | 100 |
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RFQ | |
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DISTI #
STGF4M65DF2
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EBV Elektronik | Trans IGBT Chip N 650V 8A 3Pin TO220FP Tube (Alt: STGF4M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGF4M65DF2
STGF4M65DF2 CAD Models
STGF4M65DF2 Part Data Attributes
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STGF4M65DF2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGF4M65DF2
STMicroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220FP, 3 PIN | |
| Manufacturer Package Code | TO-220FP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2016-11-23 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 296 ns | |
| Turn-on Time-Nom (ton) | 19.6 ns | |
| VCEsat-Max | 2.1 V |
Alternate Parts for STGF4M65DF2
This table gives cross-reference parts and alternative options found for STGF4M65DF2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGF4M65DF2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STGF3HF60HD | STMicroelectronics | Check for Price | 4.5 A, 600 V very fast IGBT with Ultrafast diode | STGF4M65DF2 vs STGF3HF60HD |
STGF4M65DF2 Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers, with vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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Although the datasheet specifies a maximum VCC voltage of 3.6V, it's recommended to limit the voltage to 3.3V to ensure reliable operation and minimize the risk of damage or latch-up.
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To prevent ESD damage, handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat during assembly. Ensure that the PCB and components are properly grounded, and use ESD-protected packaging and storage materials.
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For optimal performance, the clock signal should have a rise and fall time of less than 1ns, and a clock frequency jitter of less than 100ps. The clock signal should also be free from noise and ringing.