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Part Details for STGF10M65DF2 by STMicroelectronics
Results Overview of STGF10M65DF2 by STMicroelectronics
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
STGF10M65DF2 Information
STGF10M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGF10M65DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-19150-ND
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DigiKey | IGBT TRENCH FS 650V 20A TO-220FP Min Qty: 1 Lead time: 15 Weeks Container: Tube |
558 In Stock |
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$0.4594 / $1.8200 | Buy Now |
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DISTI #
STGF10M65DF2
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Avnet Americas | Trans IGBT Chip N 650V 20A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STGF10M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.4375 / $0.4652 | Buy Now |
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DISTI #
511-STGF10M65DF2
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Mouser Electronics | IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss RoHS: Compliant | 0 |
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$0.4690 / $0.5070 | Order Now |
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DISTI #
E02:0323_10180659
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Arrow Electronics | Trans IGBT Chip N-CH 650V 20A 30W 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2512 | Europe - 2500 |
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$0.4853 / $1.5736 | Buy Now |
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Future Electronics | STGF10M65DF2 Series 650 V 20 A Trench Gate field-Stop IGBT - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Container: Tube | 350Tube |
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$0.4950 / $0.5600 | Buy Now |
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Future Electronics | STGF10M65DF2 Series 650 V 20 A Trench Gate field-Stop IGBT - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.4950 / $0.5150 | Buy Now |
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DISTI #
88089437
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Verical | Trans IGBT Chip N-CH 650V 20A 30W 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 12 Package Multiple: 1 Date Code: 2512 | Americas - 2496 |
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$0.4887 / $1.5823 | Buy Now |
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Future Electronics | STGF10M65DF2 Series 650 V 20 A Trench Gate field-Stop IGBT - TO-220FP Min Qty: 1 Package Multiple: 1 |
350 null |
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$0.4950 / $0.5600 | Buy Now |
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DISTI #
STGF10M65DF2
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TME | Transistor: IGBT, 650V, 10A, 30W, TO220FP Min Qty: 1 | 0 |
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$0.6700 / $1.1200 | RFQ |
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DISTI #
STGF10M65DF2
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Avnet Silica | Trans IGBT Chip N 650V 20A 3Pin TO220FP Tube (Alt: STGF10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STGF10M65DF2
STGF10M65DF2 CAD Models
STGF10M65DF2 Part Data Attributes
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STGF10M65DF2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGF10M65DF2
STMicroelectronics
Trench gate field-stop IGBT M series, 650 V 10 A low loss
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220FP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 260 ns | |
| Turn-on Time-Nom (ton) | 27 ns | |
| VCEsat-Max | 2 V |
STGF10M65DF2 Frequently Asked Questions (FAQ)
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The maximum junction temperature that the STGF10M65DF2 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To calculate the power dissipation of the STGF10M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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The recommended gate drive voltage for the STGF10M65DF2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance.
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Yes, the STGF10M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may degrade at higher frequencies, so it's essential to carefully evaluate the device's characteristics and the application's requirements.
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To ensure the reliability of the STGF10M65DF2 in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's operating conditions, such as voltage and current, should be carefully monitored and controlled to prevent overheating.