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Part Details for STGF10H60DF by STMicroelectronics
Results Overview of STGF10H60DF by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
STGF10H60DF Information
STGF10H60DF by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGF10H60DF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STGF10H60DF
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Avnet Americas | Trans IGBT Chip N-CH 600V 20A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STGF10H60DF) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.5573 / $0.5925 | Buy Now |
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DISTI #
511-STGF10H60DF
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Mouser Electronics | IGBTs Trench gate H series 600V 10A HiSpd RoHS: Compliant | 986 |
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$0.5850 / $1.9300 | Buy Now |
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DISTI #
E02:0323_07669253
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Arrow Electronics | Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 50 Lead time: 15 Weeks Date Code: 2416 | Europe - 2000 |
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$0.6074 / $0.6587 | Buy Now |
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DISTI #
70521129
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RS | STGF10H60DF, IGBT Transistor, 20 A 600 V, 1MHz, 3-Pin TO-220FP Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.5300 | RFQ |
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STMicroelectronics | Trench gate field-stop IGBT, H series 600 V, 10 A high speed COO: China RoHS: Compliant Min Qty: 1 | 988 |
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$0.7300 / $1.8900 | Buy Now |
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DISTI #
83718678
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Verical | Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2416 | Americas - 2000 |
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$0.6031 / $0.6463 | Buy Now |
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DISTI #
STGF10H60DF
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TME | Transistor: IGBT, 600V, 10A, 30W, TO220FP Min Qty: 1 | 0 |
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$0.8400 / $1.4200 | RFQ |
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DISTI #
STGF10H60DF
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Avnet Silica | Trans IGBT Chip NCH 600V 20A 3Pin TO220FP Tube (Alt: STGF10H60DF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 12150 |
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Buy Now | |
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DISTI #
STGF10H60DF
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 7990 |
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$0.6490 / $1.7200 | Buy Now |
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DISTI #
STGF10H60DF
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EBV Elektronik | Trans IGBT Chip NCH 600V 20A 3Pin TO220FP Tube (Alt: STGF10H60DF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 9550 |
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Buy Now |
Part Details for STGF10H60DF
STGF10H60DF CAD Models
STGF10H60DF Part Data Attributes
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STGF10H60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGF10H60DF
STMicroelectronics
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 214 ns | |
| Turn-on Time-Nom (ton) | 26.8 ns | |
| VCEsat-Max | 1.95 V |
STGF10H60DF Frequently Asked Questions (FAQ)
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The maximum junction temperature that the STGF10H60DF can withstand is 175°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate resistor value for the STGF10H60DF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the STGF10H60DF can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between devices.
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To protect the STGF10H60DF from overvoltage and overcurrent conditions, use a suitable voltage clamp or surge protector, and implement overcurrent protection using a current sense resistor and a protection IC.