Part Details for STGD5H60DF by STMicroelectronics
Results Overview of STGD5H60DF by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STGD5H60DF Information
STGD5H60DF by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGD5H60DF
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
26AH0170
|
Newark | Igbt, 600V, 10A, 175Deg C, 83W, Dc Collector Current:10A, Collector Emitter Saturation Voltage Vce(On):1.5V, Power Dissipation Pd:83W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Style:To-252, No. Of Pins:3Pins, Rohs Compliant: Yes |Stmicroelectronics STGD5H60DF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4209 |
|
$0.6550 / $1.7100 | Buy Now |
DISTI #
87AK5791
|
Newark | Igbt, Single, 600V, 10A, To-252, Continuous Collector Current:10A, Collector Emitter Saturation Voltage:1.5V, Power Dissipation:83W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGD5H60DF RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.6640 / $0.7090 | Buy Now |
DISTI #
497-16479-1-ND
|
DigiKey | IGBT TRENCH FS 600V 10A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4266 In Stock |
|
$0.3541 / $1.5000 | Buy Now |
DISTI #
STGD5H60DF
|
Avnet Americas | IGBTs - Rail/Tube (Alt: STGD5H60DF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$0.3373 / $0.3586 | Buy Now |
DISTI #
511-STGD5H60DF
|
Mouser Electronics | IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed RoHS: Compliant | 2465 |
|
$0.3540 / $1.5000 | Buy Now |
|
STMicroelectronics | Trench gate field-stop IGBT, H series 600 V, 5 A high speed COO: China RoHS: Compliant Min Qty: 1 | 2465 |
|
$0.4800 / $1.4700 | Buy Now |
DISTI #
STGD5H60DF
|
TME | Transistor: IGBT, 600V, 5A, 83W, DPAK Min Qty: 1 | 2433 |
|
$0.4710 / $0.7880 | Buy Now |
DISTI #
STGD5H60DF
|
IBS Electronics | TRENCH GATE FIELD-STOP IGBT H SERIES 600 V 5 A HIGH SPEED Min Qty: 2500 Package Multiple: 1 | 2500 |
|
$0.3770 / $0.3900 | Buy Now |
DISTI #
STGD5H60DF
|
Avnet Silica | IGBTs (Alt: STGD5H60DF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
STGD5H60DF
|
EBV Elektronik | IGBTs (Alt: STGD5H60DF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 117500 |
|
Buy Now |
Part Details for STGD5H60DF
STGD5H60DF CAD Models
STGD5H60DF Part Data Attributes
|
STGD5H60DF
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STGD5H60DF
STMicroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 1000 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.9 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 280 ns | |
Turn-on Time-Nom (ton) | 39 ns | |
VCEsat-Max | 1.95 V |
STGD5H60DF Frequently Asked Questions (FAQ)
-
The maximum junction temperature that the STGD5H60DF can withstand is 175°C.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via array to dissipate heat efficiently.
-
The recommended gate resistor value for the STGD5H60DF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
-
Yes, the STGD5H60DF is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
-
To protect the STGD5H60DF from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and assembly procedures.