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Part Details for STGD4M65DF2 by STMicroelectronics
Results Overview of STGD4M65DF2 by STMicroelectronics
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STGD4M65DF2 Information
STGD4M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGD4M65DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69AH2727
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Newark | Igbt, Single, 650V, 8A, To-252, Continuous Collector Current:8A, Collector Emitter Saturation Voltage:1.6V, Power Dissipation:68W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGD4M65DF2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7250 / $1.3500 | Buy Now |
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DISTI #
497-16963-1-ND
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DigiKey | IGBT TRENCH FS 650V 8A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6124 In Stock |
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$0.4232 / $1.7100 | Buy Now |
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DISTI #
STGD4M65DF2
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Avnet Americas | Trans IGBT Chip N 650V 8A 3-Pin DPAK T/R - Bulk (Alt: STGD4M65DF2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Bulk | 0 |
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$0.3960 / $0.4210 | Buy Now |
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DISTI #
511-STGD4M65DF2
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Mouser Electronics | IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss RoHS: Compliant | 2148 |
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$0.4230 / $1.1000 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT, M series 650 V, 4 A low loss RoHS: Compliant Min Qty: 1 | 2148 |
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$0.5100 / $1.0800 | Buy Now |
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DISTI #
62812703
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Verical | Trans IGBT Chip N-CH 650V 8A 68W 3-Pin(2+Tab) DPAK T/R Min Qty: 75 Package Multiple: 1 | Americas - 7500 |
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$0.3710 / $0.8240 | Buy Now |
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DISTI #
STGD4M65DF2
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TME | Transistor: IGBT, 650V, 4A, 68W, DPAK Min Qty: 1 | 0 |
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$0.6100 / $1.0200 | RFQ |
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DISTI #
STGD4M65DF2
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Avnet Silica | Trans IGBT Chip N 650V 8A 3Pin DPAK TR (Alt: STGD4M65DF2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | Silica - 5000 |
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Buy Now | |
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DISTI #
STGD4M65DF2
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 7500 |
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$0.3480 / $1.0500 | Buy Now |
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DISTI #
STGD4M65DF2
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EBV Elektronik | Trans IGBT Chip N 650V 8A 3Pin DPAK TR (Alt: STGD4M65DF2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGD4M65DF2
STGD4M65DF2 CAD Models
STGD4M65DF2 Part Data Attributes
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STGD4M65DF2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGD4M65DF2
STMicroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | DPAK-3/2 | |
| Manufacturer Package Code | DPAK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2016-11-23 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 296 ns | |
| Turn-on Time-Nom (ton) | 19.6 ns | |
| VCEsat-Max | 2.1 V |
STGD4M65DF2 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the STGD4M65DF2 is 150°C.
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To ensure reliability, follow the recommended thermal management guidelines, use a suitable heat sink, and ensure proper PCB design and layout to minimize thermal resistance.
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The recommended gate resistor value for the STGD4M65DF2 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, the STGD4M65DF2 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB design, layout, and decoupling to minimize electromagnetic interference (EMI).
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage to the device.