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Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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STGB5H60DF by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-16478-1-ND
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DigiKey | IGBT TRENCH FS 600V 10A TO-263 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.4744 / $1.8600 | Buy Now |
DISTI #
STGB5H60DF
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Avnet Americas | Transistor I GBT N-CH 600V 10A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB5H60DF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.4744 / $0.5066 | Buy Now |
DISTI #
511-STGB5H60DF
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Mouser Electronics | IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed RoHS: Compliant | 0 |
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$0.4740 / $0.4980 | Order Now |
DISTI #
STGB5H60DF
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TME | Transistor: IGBT, 600V, 5A, 88W, D2PAK Min Qty: 1 | 0 |
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$0.5880 / $0.9870 | RFQ |
DISTI #
STGB5H60DF
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Avnet Silica | Transistor I GBT NCH 600V 10A 3Pin D2PAK TR (Alt: STGB5H60DF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STGB5H60DF
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EBV Elektronik | Transistor I GBT NCH 600V 10A 3Pin D2PAK TR (Alt: STGB5H60DF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STGB5H60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB5H60DF
STMicroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 1000 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.9 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 88 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 280 ns | |
Turn-on Time-Nom (ton) | 39 ns | |
VCEsat-Max | 1.95 V |
The maximum junction temperature (Tj) of the STGB5H60DF is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
The thermal resistance of the STGB5H60DF can be calculated using the following formula: Rth(j-a) = (Tj - Ta) / Pd, where Rth(j-a) is the thermal resistance, Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The thermal resistance values are provided in the datasheet.
The recommended gate resistor value for the STGB5H60DF depends on the specific application and the required switching frequency. A typical value is between 10 ohms and 100 ohms. However, it's recommended to consult the application note or the datasheet for more information.
Yes, the STGB5H60DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to ensure that the device is properly cooled and that the switching frequency does not exceed the recommended value to avoid overheating and reduce the lifespan of the device.
To protect the STGB5H60DF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector at the input, and a current limiter or a fuse in series with the device. Additionally, ensure that the device is operated within the recommended voltage and current ratings.