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Part Details for STGB4M65DF2 by STMicroelectronics
Results Overview of STGB4M65DF2 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STGB4M65DF2 Information
STGB4M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGB4M65DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-16964-1-ND
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DigiKey | IGBT TRENCH FS 650V 8A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.3927 / $1.6200 | Buy Now |
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DISTI #
STGB4M65DF2
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Avnet Americas | Trans IGBT Chip N 650V 8A 3-Pin D2PAK T/R - Bulk (Alt: STGB4M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Bulk | 0 |
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$0.3810 / $0.3977 | Buy Now |
|
DISTI #
511-STGB4M65DF2
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Mouser Electronics | IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss RoHS: Compliant | 0 |
|
$0.3920 / $0.4190 | Order Now |
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DISTI #
STGB4M65DF2
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TME | Transistor: IGBT, 650V, 4A, 86W, D2PAK Min Qty: 1 | 0 |
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$0.4860 / $0.8170 | RFQ |
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DISTI #
STGB4M65DF2
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Avnet Silica | Trans IGBT Chip N 650V 8A 3Pin D2PAK TR (Alt: STGB4M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | Silica - 10000 |
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Buy Now | |
|
DISTI #
STGB4M65DF2
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EBV Elektronik | Trans IGBT Chip N 650V 8A 3Pin D2PAK TR (Alt: STGB4M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGB4M65DF2
STGB4M65DF2 CAD Models
STGB4M65DF2 Part Data Attributes
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STGB4M65DF2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB4M65DF2
STMicroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Manufacturer Package Code | D2PAK | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2016-11-23 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 296 ns | |
| Turn-on Time-Nom (ton) | 19.6 ns | |
| VCEsat-Max | 2.1 V |