Part Details for SSM6J501NU,LF(T by Toshiba America Electronic Components
Results Overview of SSM6J501NU,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
SSM6J501NU,LF(T Information
SSM6J501NU,LF(T by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM6J501NU,LF(T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK7986
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Newark | Mosfet, P-Ch, 20V, 10A, Sot-1220, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Toshiba SSM6J501NU, LF(T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10419 |
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$0.0900 | Buy Now |
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DISTI #
82724497
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Verical | Trans MOSFET P-CH 20V 10A 6-Pin UDFN EP T/R RoHS: Compliant Min Qty: 137 Package Multiple: 1 Date Code: 2413 | Americas - 2981 |
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$0.2420 / $0.2920 | Buy Now |
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DISTI #
SSM6J501NU,LF(T
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Avnet Asia | Trans MOSFET P-CH 20V 10A 6-Pin UDFN (Alt: SSM6J501NU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SSM6J501NU,LF(T
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2981 |
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$0.2070 / $0.4210 | Buy Now |
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DISTI #
SSM6J501NU,LF(T
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EBV Elektronik | Trans MOSFET PCH 20V 10A 6Pin UDFN (Alt: SSM6J501NU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SSM6J501NU,LF(T
SSM6J501NU,LF(T CAD Models
SSM6J501NU,LF(T Part Data Attributes
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SSM6J501NU,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM6J501NU,LF(T
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | DFN-6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba |
SSM6J501NU,LF(T Frequently Asked Questions (FAQ)
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The recommended land pattern for SSM6J501NU,LF(T is a rectangle with a size of 2.5mm x 1.6mm, with a thermal pad in the center. The land pattern should be designed to minimize thermal resistance and ensure good heat dissipation.
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To ensure the reliability of SSM6J501NU,LF(T in high-temperature applications, it is recommended to follow proper derating guidelines, use a heat sink if necessary, and ensure good thermal management. Additionally, the device should be operated within its recommended operating conditions and not exposed to excessive voltage or current stress.
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The maximum allowable power dissipation for SSM6J501NU,LF(T is 2.5W. However, this value can vary depending on the operating conditions and thermal management. It is recommended to consult the datasheet and follow proper thermal design guidelines to ensure reliable operation.
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Yes, SSM6J501NU,LF(T can be used in a switching regulator application. However, it is recommended to ensure that the device is operated within its recommended switching frequency range and that the output voltage is properly filtered to minimize ringing and oscillations.
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To protect SSM6J501NU,LF(T from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, use ESD-protective packaging, and ensure that the device is properly grounded during assembly and testing.