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Part Details for SSM3K339R by Toshiba America Electronic Components
Results Overview of SSM3K339R by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SSM3K339R Information
SSM3K339R by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM3K339R
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM3K339R
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TME | Transistor: N-MOSFET, unipolar, 40V, 2A, 1W, SOT23F Min Qty: 5 | 5100 |
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$0.0680 / $0.1440 | Buy Now |
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Win Source Electronics | MOSFETs Silicon N-Channel MOS | 45814 |
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$0.1460 / $0.2189 | Buy Now |
Part Details for SSM3K339R
SSM3K339R CAD Models
SSM3K339R Part Data Attributes
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SSM3K339R
Toshiba America Electronic Components
Buy Now
Datasheet
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SSM3K339R
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Junction FETs (Single/Dual) - Small-Signal MOSFETs(Single)
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOT-23F, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.208 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7.5 pF | |
| JESD-30 Code | R-PDSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SSM3K339R Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure that the thermal pad is connected to a large copper area to dissipate heat efficiently.
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Ensure that the input voltage is within the recommended range (1.8V to 5.5V) and that the enable pin is properly biased (high or low) according to the application requirements.
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The maximum allowable power dissipation is 1.5W. Ensure that the device is properly heat-sinked and that the ambient temperature is within the recommended range (-40°C to 125°C).
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Yes, the SSM3K339R is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that the device is properly qualified and validated for the specific application requirements.
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The POR and BOR features are enabled by default. Ensure that the power supply is stable and within the recommended range to prevent unwanted resets. You can also disable these features by tying the POR/BOR pins to VCC or GND, respectively.