Part Details for SSM3K15F,LF(T by Toshiba America Electronic Components
Results Overview of SSM3K15F,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SSM3K15F,LF(T Information
SSM3K15F,LF(T by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM3K15F,LF(T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AM0615
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Newark | Mosfet, N-Ch, 30V, 0.1A, Sot-346 Rohs Compliant: Yes |Toshiba SSM3K15F, LF(T RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3000 |
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$0.0580 / $0.2930 | Buy Now |
DISTI #
83AK2786
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Newark | Mosfet, N-Ch, 30V, 0.1A, Sot-346 Rohs Compliant: Yes |Toshiba SSM3K15F, LF(T RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0330 / $0.0540 | Buy Now |
Part Details for SSM3K15F,LF(T
SSM3K15F,LF(T CAD Models
SSM3K15F,LF(T Part Data Attributes
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SSM3K15F,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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SSM3K15F,LF(T
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SC-59, TO-236MOD, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.6 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.2 W | |
Power Dissipation-Max (Abs) | 0.2 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
SSM3K15F,LF(T Frequently Asked Questions (FAQ)
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Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
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Implement a heat sink or thermal management system, and ensure the device is operated within the recommended temperature range (TJ = -40°C to 150°C).
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation.
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Yes, the SSM3K15F,LF(T) is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
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The internal diode's reverse recovery characteristics can be managed by using a snubber circuit or a fast-recovery diode in parallel with the MOSFET.