Datasheets
SSM3J15FS,LF by: Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SSM3J15FS,LF by Toshiba America Electronic Components

Results Overview of SSM3J15FS,LF by Toshiba America Electronic Components

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SSM3J15FS,LF Information

SSM3J15FS,LF by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SSM3J15FS,LF

Part # Distributor Description Stock Price Buy
DISTI # SSM3J15FSLFCT-ND
DigiKey MOSFET P-CH 30V 100MA SSM Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 20361
In Stock
  • 1 $0.2100
  • 10 $0.1280
  • 100 $0.0796
  • 500 $0.0581
  • 1,000 $0.0512
  • 3,000 $0.0367
  • 6,000 $0.0352
  • 9,000 $0.0329
  • 15,000 $0.0296
  • 21,000 $0.0295
  • 30,000 $0.0263
  • 75,000 $0.0258
  • 150,000 $0.0241
  • 300,000 $0.0225
$0.0225 / $0.2100 Buy Now
DISTI # SSM3J15FS,LF
Avnet Americas - Tape and Reel (Alt: SSM3J15FS,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.0214
  • 6,000 $0.0211
  • 12,000 $0.0207
  • 18,000 $0.0203
  • 24,000 $0.0200
$0.0200 / $0.0214 Buy Now
DISTI # SSM3J15FS,LF
Avnet Americas - Tape and Reel (Alt: SSM3J15FS,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.0214
  • 6,000 $0.0211
  • 12,000 $0.0207
  • 18,000 $0.0203
  • 24,000 $0.0200
$0.0200 / $0.0214 Buy Now
DISTI # 757-SSM3J15FS,LF
Mouser Electronics MOSFETs Small Signal MOSFET P-ch VDSS=-30V, VGSS=+/-20V, ID=-0.1A, RDS(ON)=12ohm a. 4.0V, in SSM package RoHS: Compliant 778
  • 1 $0.2000
  • 10 $0.1250
  • 100 $0.0780
  • 500 $0.0570
  • 1,000 $0.0470
  • 3,000 $0.0340
  • 6,000 $0.0330
  • 9,000 $0.0310
  • 24,000 $0.0250
$0.0250 / $0.2000 Buy Now

Part Details for SSM3J15FS,LF

SSM3J15FS,LF CAD Models

SSM3J15FS,LF Part Data Attributes

SSM3J15FS,LF Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
SSM3J15FS,LF Toshiba America Electronic Components Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Toshiba
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.5 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.1 W
Power Dissipation-Max (Abs) 0.1 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSM3J15FS,LF

This table gives cross-reference parts and alternative options found for SSM3J15FS,LF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSM3J15FS,LF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SSM3J15FV(NHF,Z) Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FV(NHF,Z)
SSM3J15FS(T5LNSN,F Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FS(T5LNSN,F
SSM3J15FU(5LKENW,F Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FU(5LKENW,F
SSM3J15FU(T5LSAN,F Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FU(T5LSAN,F
SSM3J15FS,LXGF Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FS,LXGF
SSM3J15FS(T5LIMASF Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SSM3J15FS,LF vs SSM3J15FS(T5LIMASF

SSM3J15FS,LF Frequently Asked Questions (FAQ)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended for optimal thermal performance.

  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to ensure a stable input voltage.

  • The maximum operating temperature range for SSM3J15FS,LF is -40°C to 150°C. However, the device's performance may degrade at higher temperatures, and it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance.

  • The device has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A wrist strap or anti-static mat is recommended to prevent ESD damage.

  • The device should be stored in a dry, cool place away from direct sunlight. The storage temperature range is -40°C to 30°C, and the humidity should be below 60%.

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