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Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SSM3J15FS,LF by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM3J15FSLFCT-ND
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DigiKey | MOSFET P-CH 30V 100MA SSM Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
20361 In Stock |
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$0.0225 / $0.2100 | Buy Now |
DISTI #
SSM3J15FS,LF
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Avnet Americas | - Tape and Reel (Alt: SSM3J15FS,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0200 / $0.0214 | Buy Now |
DISTI #
SSM3J15FS,LF
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Avnet Americas | - Tape and Reel (Alt: SSM3J15FS,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0200 / $0.0214 | Buy Now |
DISTI #
757-SSM3J15FS,LF
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Mouser Electronics | MOSFETs Small Signal MOSFET P-ch VDSS=-30V, VGSS=+/-20V, ID=-0.1A, RDS(ON)=12ohm a. 4.0V, in SSM package RoHS: Compliant | 778 |
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$0.0250 / $0.2000 | Buy Now |
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SSM3J15FS,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3J15FS,LF
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.5 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 0.1 W | |
Power Dissipation-Max (Abs) | 0.1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SSM3J15FS,LF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSM3J15FS,LF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SSM3J15FV(NHF,Z) | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FV(NHF,Z) |
SSM3J15FS(T5LNSN,F | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FS(T5LNSN,F |
SSM3J15FU(5LKENW,F | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FU(5LKENW,F |
SSM3J15FU(T5LSAN,F | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FU(T5LSAN,F |
SSM3J15FS,LXGF | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FS,LXGF |
SSM3J15FS(T5LIMASF | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SSM3J15FS,LF vs SSM3J15FS(T5LIMASF |
A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended for optimal thermal performance.
The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to ensure a stable input voltage.
The maximum operating temperature range for SSM3J15FS,LF is -40°C to 150°C. However, the device's performance may degrade at higher temperatures, and it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance.
The device has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A wrist strap or anti-static mat is recommended to prevent ESD damage.
The device should be stored in a dry, cool place away from direct sunlight. The storage temperature range is -40°C to 30°C, and the humidity should be below 60%.