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Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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SQA410EJ-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQA410EJ-T1_GE3
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Avnet Americas | N-CHANNEL 20-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQA410EJ-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.1898 / $0.2016 | Buy Now |
DISTI #
781-SQA410EJ-T1_GE3
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Mouser Electronics | MOSFETs 20V 7.8A 13.6W AEC-Q101 Qualified RoHS: Compliant | 199183 |
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$0.2190 / $0.7700 | Buy Now |
DISTI #
SQA410EJ-T1_GE3
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EBV Elektronik | NCHANNEL 20V DS 175C MOSFET (Alt: SQA410EJ-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SQA410EJ-T1_GE3
Vishay Intertechnologies
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Datasheet
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SQA410EJ-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SC-70, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 7.8 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
The recommended storage condition for SQA410EJ-T1_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
Yes, SQA410EJ-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
Yes, SQA410EJ-T1_GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
The maximum operating temperature range for SQA410EJ-T1_GE3 is -40°C to 125°C, with a derating of capacitance above 85°C.
Yes, SQA410EJ-T1_GE3 is suitable for high-voltage applications up to 250 VDC, making it suitable for power supply and filtering applications.