Datasheets
SQA410EJ-T1_GE3 by:

Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Part Details for SQA410EJ-T1_GE3 by Vishay Intertechnologies

Results Overview of SQA410EJ-T1_GE3 by Vishay Intertechnologies

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Applications Environmental Monitoring Industrial Automation Energy and Power Systems Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Robotics and Drones

SQA410EJ-T1_GE3 Information

SQA410EJ-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SQA410EJ-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQA410EJ-T1_GE3
Avnet Americas N-CHANNEL 20-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQA410EJ-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2016
  • 6,000 $0.1984
  • 12,000 $0.1953
  • 18,000 $0.1920
  • 24,000 $0.1898
$0.1898 / $0.2016 Buy Now
DISTI # 781-SQA410EJ-T1_GE3
Mouser Electronics MOSFETs 20V 7.8A 13.6W AEC-Q101 Qualified RoHS: Compliant 199183
  • 1 $0.7700
  • 10 $0.5380
  • 100 $0.3670
  • 500 $0.3070
  • 1,000 $0.2610
  • 3,000 $0.2260
  • 6,000 $0.2190
$0.2190 / $0.7700 Buy Now
DISTI # SQA410EJ-T1_GE3
EBV Elektronik NCHANNEL 20V DS 175C MOSFET (Alt: SQA410EJ-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SQA410EJ-T1_GE3

SQA410EJ-T1_GE3 CAD Models

SQA410EJ-T1_GE3 Part Data Attributes

SQA410EJ-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQA410EJ-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SC-70, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 7.8 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

SQA410EJ-T1_GE3 Related Parts

SQA410EJ-T1_GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SQA410EJ-T1_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.

  • Yes, SQA410EJ-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.

  • Yes, SQA410EJ-T1_GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.

  • The maximum operating temperature range for SQA410EJ-T1_GE3 is -40°C to 125°C, with a derating of capacitance above 85°C.

  • Yes, SQA410EJ-T1_GE3 is suitable for high-voltage applications up to 250 VDC, making it suitable for power supply and filtering applications.

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