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Transistors / Power Field-Effect Transistors / SQA410CEJW-T1_GE3
Datasheets
SQA410CEJW-T1_GE3 by:

Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70W, 6 PIN

Part Details for SQA410CEJW-T1_GE3 by Vishay Intertechnologies

Results Overview of SQA410CEJW-T1_GE3 by Vishay Intertechnologies

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SQA410CEJW-T1_GE3 Information

SQA410CEJW-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SQA410CEJW-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 74AJ2799
Newark Mosfet, N-Ch, 20V, 7.8A, Powerpak Sc-70W, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:7.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Vishay SQA410CEJW-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 75
  • 1 $0.0410
  • 10 $0.0410
  • 25 $0.0410
  • 50 $0.0410
  • 100 $0.0410
  • 250 $0.0410
$0.0410 Buy Now
DISTI # 01AM0591
Newark Mosfet, N-Ch, 20V, 7.8A, Powerpak Sc-70W Rohs Compliant: Yes |Vishay SQA410CEJW-T1_GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.1970
  • 6,000 $0.1900
  • 12,000 $0.1760
  • 18,000 $0.1740
$0.1740 / $0.1970 Buy Now
DISTI # SQA410CEJW-T1_GE3
Avnet Americas Transistor Power MOSFET N-CH 20V 7.8A 6-Pin PowerPAK SC-70W - Tape and Reel (Alt: SQA410CEJW-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1177
  • 6,000 $0.1159
  • 12,000 $0.1140
  • 18,000 $0.1121
  • 24,000 $0.1108
$0.1108 / $0.1177 Buy Now
DISTI # 78-SQA410CEJW-T1_GE3
Mouser Electronics MOSFETs 20v 7.8amp AEC-Q101 RoHS: Compliant 20028
  • 1 $0.5100
  • 10 $0.3560
  • 100 $0.2660
  • 500 $0.2090
  • 1,000 $0.1650
  • 3,000 $0.1470
  • 6,000 $0.1370
  • 9,000 $0.1280
$0.1280 / $0.5100 Buy Now
DISTI # V72:2272_26249042
Arrow Electronics Trans MOSFET N-CH 20V 7.8A 6-Pin PowerPAK SC-70W T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Container: Cut Strips Americas - 50
  • 1 $0.0678
  • 10 $0.0476
  • 25 $0.0471
  • 50 $0.0254
$0.0254 / $0.0678 Buy Now
DISTI # SQA410CEJW-T1_GE3
EBV Elektronik Transistor Power MOSFET NCH 20V 78A 6Pin PowerPAK SC70W (Alt: SQA410CEJW-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SQA410CEJW-T1_GE3

SQA410CEJW-T1_GE3 CAD Models

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SQA410CEJW-T1_GE3 Part Data Attributes

Parametric Data
SQA410CEJW-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQA410CEJW-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70W, 6 PIN
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SC-70W, 6 PIN
Reach Compliance Code unknown
Factory Lead Time 15 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 7.8 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology TRENCH MOSFET
Feedback Cap-Max (Crss) 58 pF
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 13.6 W
Pulsed Drain Current-Max (IDM) 30 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 32 ns

SQA410CEJW-T1_GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SQA410CEJW-T1_GE3 is to store them in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.

  • Yes, SQA410CEJW-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.

  • Yes, SQA410CEJW-T1_GE3 is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.

  • The maximum operating voltage derating for SQA410CEJW-T1_GE3 is 80% of the rated voltage, to ensure reliable operation and prevent premature failure.

  • Yes, SQA410CEJW-T1_GE3 is AEC-Q200 qualified, making it suitable for use in automotive applications, including under-the-hood and in-cabin systems.

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