Part Details for SQ2325ES-T1-GE3 by Vishay Intertechnologies
Results Overview of SQ2325ES-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
SQ2325ES-T1-GE3 Information
SQ2325ES-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQ2325ES-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQ2325ES-T1-GE3
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TTI | MOSFETs SOT23 150V .84A P-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.2050 / $0.2090 | Buy Now |
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DISTI #
SQ2325ES-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -150V, -1A, Idm: -2A, 1W, SOT23 Min Qty: 1 | 2959 |
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$0.3590 / $0.8720 | Buy Now |
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Vyrian | Transistors | 32844 |
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RFQ |
Part Details for SQ2325ES-T1-GE3
SQ2325ES-T1-GE3 CAD Models
SQ2325ES-T1-GE3 Part Data Attributes
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SQ2325ES-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQ2325ES-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.84A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1.12 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 0.84 A | |
| Drain-source On Resistance-Max | 1.77 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 22 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 2 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 34 ns | |
| Turn-on Time-Max (ton) | 30 ns |
SQ2325ES-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SQ2325ES-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.25 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
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To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a solder paste with a melting point of 217°C to 221°C. Also, make sure to follow the recommended soldering profile and avoid overheating the component.
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The maximum operating temperature range for the SQ2325ES-T1_GE3 is -55°C to 150°C, with a derating of 1.33 mΩ/°C above 25°C.
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Yes, the SQ2325ES-T1_GE3 is suitable for high-frequency applications up to 1 GHz, but it's essential to consider the component's parasitic inductance and capacitance, as well as the PCB layout and design, to minimize signal degradation and ensure optimal performance.
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Store the SQ2325ES-T1_GE3 in a dry, cool place, away from direct sunlight and moisture. During shipping, use anti-static packaging materials and avoid exposing the components to mechanical stress or vibration.