-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SISA96DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SISA96DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SISA96DN-T1-GE3 Information
SISA96DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SISA96DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
10AC9117
|
Newark | Mosfet, N-Ch, 30V, 16A, Powerpak 1212, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0073Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Vishay SISA96DN-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 27354 |
|
$0.2000 / $0.6010 | Buy Now |
|
DISTI #
20AC3909
|
Newark | N-Channel 30-V (D-S) Mosfet |Vishay SISA96DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1330 / $0.2000 | Buy Now |
|
DISTI #
SISA96DN-T1-GE3
|
Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISA96DN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
|
$0.1129 / $0.1200 | Buy Now |
|
DISTI #
78-SISA96DN-T1-GE3
|
Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 74573 |
|
$0.1240 / $0.5200 | Buy Now |
|
DISTI #
E02:0323_11354041
|
Arrow Electronics | Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks | Europe - 6000 |
|
$0.1362 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 8.8 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel | 6000Reel |
|
$0.1290 / $0.1340 | Buy Now |
|
DISTI #
58340748
|
Verical | Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 | Americas - 6000 |
|
$0.2362 | Buy Now |
|
DISTI #
80326341
|
Verical | Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2416 | Americas - 3000 |
|
$0.2205 | Buy Now |
|
DISTI #
SISA96DN-T1-GE3
|
TTI | MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.1200 / $0.1330 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 8.8 mOhm SMT TrenchFET� Power Mosfet - PowerPAK 1212-8 Min Qty: 3000 Package Multiple: 3000 |
6000 null |
|
$0.1290 / $0.1340 | Buy Now |
Part Details for SISA96DN-T1-GE3
SISA96DN-T1-GE3 CAD Models
SISA96DN-T1-GE3 Part Data Attributes
|
|
SISA96DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SISA96DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 37 pF | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 26.5 W | |
| Pulsed Drain Current-Max (IDM) | 65 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 44 ns | |
| Turn-on Time-Max (ton) | 66 ns |
SISA96DN-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended storage condition for SISA96DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
-
While SISA96DN-T1-GE3 has a high-temperature rating, it's essential to derate the power according to the temperature coefficient to ensure reliable operation. Consult the datasheet for specific derating guidelines.
-
To prevent ESD damage, use proper ESD protection equipment, such as wrist straps, mats, and bags. Ensure that all personnel handling the device are grounded, and follow proper handling procedures.
-
The recommended soldering profile for SISA96DN-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
-
While SISA96DN-T1-GE3 is designed to operate in a wide range of humidity conditions, it's essential to follow proper moisture sensitivity level (MSL) guidelines to prevent damage. Consult the datasheet for specific MSL ratings.