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Part Details for SIS862DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SIS862DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIS862DN-T1-GE3 Information
SIS862DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIS862DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
40X8692
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Newark | Mosfet Transistor, N Channel, 40 A, 60 V, 0.007 Ohm, 10 V Rohs Compliant: Yes |Vishay SIS862DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 30996 |
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$0.6140 / $1.1600 | Buy Now |
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DISTI #
99W9582
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Newark | Mosfet Transistor, N Channel, 40 A, 60 V, 0.007 Ohm, 10 V |Vishay SIS862DN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4830 / $0.5640 | Buy Now |
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DISTI #
SIS862DN-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 60 V, 40 A, 0.007 ohm, PowerPAK 1212, Surface Mount - Tape and Reel (Alt: SIS862DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.4051 / $0.4219 | Buy Now |
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DISTI #
78-SIS862DN-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 35690 |
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$0.4440 / $1.3400 | Buy Now |
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DISTI #
V72:2272_07432210
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Arrow Electronics | Trans MOSFET N-CH 60V 40A 8-Pin PowerPAK 1212 T/R Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2431 Container: Cut Strips | Americas - 1903 |
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$0.4343 / $1.2648 | Buy Now |
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DISTI #
84024217
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Verical | Trans MOSFET N-CH 60V 40A 8-Pin PowerPAK 1212 T/R Min Qty: 14 Package Multiple: 1 Date Code: 2431 | Americas - 1903 |
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$0.4343 / $0.9119 | Buy Now |
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DISTI #
SIS862DN-T1-GE3
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TTI | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.4220 / $0.4550 | Buy Now |
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DISTI #
SIS862DN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 40A, Idm: 100A, 52W Min Qty: 1 | 0 |
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$0.6800 / $1.0200 | RFQ |
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DISTI #
SIS862DN-T1-GE3
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IBS Electronics | N-CHANNEL 60 V 8.5 MOHM 52 W TRENCHFET POWER MOSFET - POWERPAK 1212-8 Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.8515 | Buy Now |
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DISTI #
SIS862DN-T1-GE3
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Avnet Asia | Power MOSFET, N Channel, 60 V, 40 A, 0.007 ohm, PowerPAK 1212, Surface Mount (Alt: SIS862DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SIS862DN-T1-GE3
SIS862DN-T1-GE3 CAD Models
SIS862DN-T1-GE3 Part Data Attributes
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SIS862DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS862DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIS862DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIS862DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
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Yes, the SIS862DN-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
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To prevent ESD damage, handle the SIS862DN-T1-GE3 with anti-static wrist straps, mats, or other ESD-protective equipment. Ensure the workspace and tools are also ESD-safe. Avoid touching the component's pins or leads, and use ESD-safe packaging and storage materials.
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The maximum allowable power dissipation for the SIS862DN-T1-GE3 is dependent on the operating conditions, such as ambient temperature and airflow. Refer to the datasheet for specific power dissipation ratings and thermal resistance values to ensure safe operation.
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The SIS862DN-T1-GE3 is rated for operation up to 150°C (302°F). However, it's essential to consider the component's power dissipation, thermal resistance, and derating factors when operating in high-temperature environments to prevent overheating and ensure reliable operation.