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Part Details for SIRA18DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIRA18DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
SIRA18DP-T1-GE3 Information
SIRA18DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIRA18DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X1949
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Newark | Mosfet, N-Ch, 30V, 33A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SIRA18DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 700 |
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$0.0740 | Buy Now |
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DISTI #
SIRA18DP-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 30 V, 33 A, 0.006 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SIRA18DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
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$0.1882 / $0.2000 | Buy Now |
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DISTI #
19X1949
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Avnet Americas | Power MOSFET, N Channel, 30 V, 33 A, 0.006 ohm, PowerPAK SO, Surface Mount - Bulk (Alt: 19X1949) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Bulk | 700 Partner Stock |
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$0.4190 / $0.8310 | Buy Now |
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DISTI #
78-SIRA18DP-T1-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 10746 |
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$0.2220 / $0.8200 | Buy Now |
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DISTI #
39172486
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Verical | Trans MOSFET N-CH 30V 33A 8-Pin PowerPAK SO EP T/R Min Qty: 676 Package Multiple: 1 | Americas - 700 |
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$0.1118 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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DISTI #
SIRA18DP-T1-GE3
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TTI | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.1950 / $0.2110 | Buy Now |
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DISTI #
SIRA18DP-T1-GE3
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TTI | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.1950 / $0.2110 | Buy Now |
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DISTI #
SIRA18DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 26.3A, Idm: 70A Min Qty: 1 | 0 |
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$0.2830 / $0.7370 | RFQ |
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DISTI #
SIRA18DP-T1-GE3
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Avnet Asia | Power MOSFET, N Channel, 30 V, 33 A, 0.006 ohm, PowerPAK SO, Surface Mount (Alt: SIRA18DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SIRA18DP-T1-GE3
SIRA18DP-T1-GE3 CAD Models
SIRA18DP-T1-GE3 Part Data Attributes
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SIRA18DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA18DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 14.7 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIRA18DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIRA18DP-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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While SIRA18DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing to ensure suitability for your specific application.
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To prevent electrostatic discharge (ESD) damage, handle SIRA18DP-T1-GE3 components in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the component pins or leads.
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The recommended soldering profile for SIRA18DP-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. However, it's recommended to consult the Vishay Intertechnologies application note for specific guidance.
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While SIRA18DP-T1-GE3 meets the requirements for automotive applications, it's essential to consult with a Vishay Intertechnologies representative to ensure compliance with specific automotive industry standards and regulations.