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Part Details for SIR632DP-T1-RE3 by Vishay Intertechnologies
Results Overview of SIR632DP-T1-RE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIR632DP-T1-RE3 Information
SIR632DP-T1-RE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SIR632DP-T1-RE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15AC8643
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Newark | Mosfet, N-Ch, 150V, 29A, 150Deg C, 69.5W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:29A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIR632DP-T1-RE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10996 |
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$1.1000 / $1.6100 | Buy Now |
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DISTI #
20AC3892
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Newark | N-Channel 150-V (D-S) Mosfet |Vishay SIR632DP-T1-RE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5730 / $0.5850 | Buy Now |
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DISTI #
SIR632DP-T1-RE3
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Avnet Americas | N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SIR632DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.4848 / $0.5012 | Buy Now |
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DISTI #
78-SIR632DP-T1-RE3
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Mouser Electronics | MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 7325 |
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$0.5260 / $1.3700 | Buy Now |
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DISTI #
V36:1790_17597330
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Arrow Electronics | Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks Date Code: 2445 | Americas - 3000 |
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$0.5142 / $0.5393 | Buy Now |
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DISTI #
V72:2272_17597330
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Arrow Electronics | Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2024 Container: Cut Strips | Americas - 38 |
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$0.5447 / $0.6302 | Buy Now |
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DISTI #
87024608
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Verical | Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2445 | Americas - 3000 |
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$0.5142 / $0.5393 | Buy Now |
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DISTI #
39830640
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Verical | Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R Min Qty: 12 Package Multiple: 1 Date Code: 2024 | Americas - 38 |
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$0.5447 / $0.5956 | Buy Now |
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Bristol Electronics | 1747 |
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RFQ | ||
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DISTI #
SIR632DP-T1-RE3
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TTI | MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.5150 / $0.5410 | Buy Now |
Part Details for SIR632DP-T1-RE3
SIR632DP-T1-RE3 CAD Models
SIR632DP-T1-RE3 Part Data Attributes
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SIR632DP-T1-RE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR632DP-T1-RE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 8.5 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 66 ns | |
| Turn-on Time-Max (ton) | 56 ns |
SIR632DP-T1-RE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for SIR632DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Power MOSFETs' (document number: 41551).
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To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the SIR632DP-T1-RE3, and consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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The maximum allowed voltage for the SIR632DP-T1-RE3 is 30V, as specified in the datasheet. Exceeding this voltage may damage the device.
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Yes, the SIR632DP-T1-RE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, ensure that the device is properly driven and the layout is optimized to minimize parasitic inductance and capacitance.
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To protect the SIR632DP-T1-RE3 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider implementing ESD protection circuits in the application.