Part Details for SIHW47N60E-GE3 by Vishay Intertechnologies
Results Overview of SIHW47N60E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIHW47N60E-GE3 Information
SIHW47N60E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHW47N60E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHW47N60E-GE3
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Avnet Americas | N-CHANNEL 600V - Tape and Reel (Alt: SIHW47N60E-GE3) RoHS: Compliant Min Qty: 480 Package Multiple: 480 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$4.6080 / $4.8750 | Buy Now |
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DISTI #
78-SIHW47N60E-GE3
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Mouser Electronics | MOSFETs 600V Vds 30V Vgs TO-247AD RoHS: Compliant | 421 |
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$4.8700 / $7.3900 | Buy Now |
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Onlinecomponents.com | MOSFET Transistor - N-Channel - 600 V Drain to Source Voltage - 47A Continuous Drain Current - ±20V Vgs (Max) - TO-247AD Package - Through Hole. RoHS: Compliant |
126 Partner Stock |
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$8.3600 / $11.2400 | Buy Now |
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Quest Components | 18 |
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$6.0000 / $12.0000 | Buy Now | |
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DISTI #
SIHW47N60E-GE3
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TTI | MOSFETs 600V Vds 30V Vgs TO-247AD RoHS: Compliant pbFree: Pb-Free Min Qty: 480 Package Multiple: 480 Container: Tube |
Americas - 960 In Stock |
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$4.6500 | Buy Now |
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DISTI #
SIHW47N60E-GE3
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TTI | MOSFETs 600V Vds 30V Vgs TO-247AD RoHS: Compliant pbFree: Pb-Free Min Qty: 480 Package Multiple: 480 Container: Tube |
Americas - 960 In Stock |
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$4.6500 | Buy Now |
Part Details for SIHW47N60E-GE3
SIHW47N60E-GE3 CAD Models
SIHW47N60E-GE3 Part Data Attributes
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SIHW47N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHW47N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1800 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 357 W | |
| Pulsed Drain Current-Max (IDM) | 145 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHW47N60E-GE3
This table gives cross-reference parts and alternative options found for SIHW47N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHW47N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW60N65M5 | STMicroelectronics | Check for Price | 46A, 650V, 0.059ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | SIHW47N60E-GE3 vs STW60N65M5 |
| STFW60N65M5 | STMicroelectronics | Check for Price | 46A, 650V, 0.059ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TO-3PF, 3 PIN | SIHW47N60E-GE3 vs STFW60N65M5 |
SIHW47N60E-GE3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SIHW47N60E-GE3 is -55°C to 175°C.
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Yes, the SIHW47N60E-GE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The recommended gate resistor value for the SIHW47N60E-GE3 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the SIHW47N60E-GE3 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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The maximum allowed voltage transient for the SIHW47N60E-GE3 is 600V, but it is recommended to limit the voltage transient to 500V or less to ensure reliable operation.