Part Details for SI7434DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7434DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7434DP-T1-GE3 Information
SI7434DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7434DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
26R1922
|
Newark | N Channel Mosfet, 250V, 3.8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:3.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:6V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7434DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
15R5190
|
Newark | N Channel Mosfet, 250V, 3.8A, Soic, Continuous Drain Current Id:3.8A, Drain Source Voltage Vds:250V, No. Of Pins:8, On Resistance Rds(On):162Mohm, Operating Temperature Range:-55°C To +150°C, Package/Case:8-Soic Rohs Compliant: Yes |Vishay SI7434DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
SI7434DP-T1-GE3
|
Avnet Americas | N-CHANNEL 250-V (D-S) MOSFET - Tape and Reel (Alt: SI7434DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
|
$1.4588 / $1.5500 | Buy Now |
|
DISTI #
781-SI7434DP-T1-GE3
|
Mouser Electronics | MOSFETs 250V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 5746 |
|
$1.6000 / $3.6900 | Buy Now |
|
DISTI #
SI7434DP-T1-GE3
|
EBV Elektronik | NCHANNEL 250V DS MOSFET (Alt: SI7434DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 10124 |
|
RFQ |
Part Details for SI7434DP-T1-GE3
SI7434DP-T1-GE3 CAD Models
SI7434DP-T1-GE3 Part Data Attributes
|
|
SI7434DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7434DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 8.4 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SI7434DP-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the SI7434DP-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
-
To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-55°C to 175°C), and follow proper thermal management practices, such as providing adequate heat sinking and airflow.
-
The maximum allowed voltage on the input pins of the SI7434DP-T1-GE3 is 5V, which is the maximum rating for the device. Exceeding this voltage may cause damage to the device.
-
Yes, the SI7434DP-T1-GE3 is suitable for use in switching power supply applications due to its high voltage and current ratings, as well as its fast switching times. However, ensure that the device is properly biased and that the application is designed to meet the device's specifications.
-
To protect the SI7434DP-T1-GE3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.