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Transistors / Power Field-Effect Transistors / SI3493DDV-T1-GE3
Datasheets
SI3493DDV-T1-GE3 by:

Small Signal Field-Effect Transistor,

Part Details for SI3493DDV-T1-GE3 by Vishay Intertechnologies

Results Overview of SI3493DDV-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI3493DDV-T1-GE3 Information

SI3493DDV-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI3493DDV-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 15AC8651
Newark Mosfet, P-Ch, 20V, 8A, 150Deg C, 3.6W, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI3493DDV-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 390
  • 1 $0.0370
  • 10 $0.0370
  • 25 $0.0370
  • 50 $0.0370
$0.0370 Buy Now
DISTI # 20AC3924
Newark P-Channel 20-V (D-S) Mosfet |Vishay SI3493DDV-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.1320
  • 10,000 $0.1160
  • 20,000 $0.1040
  • 30,000 $0.0970
  • 50,000 $0.0880
$0.0880 / $0.1320 Buy Now
DISTI # 15AC8651
Avnet Americas Power MOSFET, P Channel, 20 V, 8 A, 0.02 ohm, TSOP, Surface Mount - Product that comes on tape, but is not reeled (Alt: 15AC8651) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack 390 Partner Stock
  • 1 $0.2000
  • 10 $0.1570
  • 25 $0.1450
  • 50 $0.1530
  • 100 $0.1390
$0.1390 / $0.2000 Buy Now
DISTI # SI3493DDV-T1-GE3
Avnet Americas Power MOSFET, P Channel, 20 V, 8 A, 0.02 ohm, TSOP, Surface Mount - Tape and Reel (Alt: SI3493DDV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.0794
  • 12,000 $0.0781
  • 18,000 $0.0769
  • 30,000 $0.0756
  • 60,000 $0.0747
$0.0747 / $0.0794 Buy Now
DISTI # 78-SI3493DDV-T1-GE3
Mouser Electronics MOSFETs -20V Vds 8V Vgs TSOP-6 RoHS: Compliant 50452
  • 1 $0.2100
  • 10 $0.1510
  • 100 $0.1410
  • 1,000 $0.1350
  • 3,000 $0.1040
  • 6,000 $0.1010
  • 9,000 $0.0940
  • 24,000 $0.0910
$0.0910 / $0.2100 Buy Now
DISTI # V72:2272_17597331
Arrow Electronics Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2235 Container: Cut Strips Americas - 6
  • 1 $0.0865
$0.0865 Buy Now
DISTI # SI3493DDV-T1-GE3
TTI MOSFETs -20V Vds 8V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 3000
In Stock
  • 3,000 $0.0800
  • 6,000 $0.0790
  • 9,000 $0.0770
  • 12,000 $0.0760
  • 24,000 $0.0740
$0.0740 / $0.0800 Buy Now
DISTI # SI3493DDV-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -8A, Idm: -32A Min Qty: 1 0
  • 1 $0.3060
  • 10 $0.2260
  • 25 $0.1960
  • 100 $0.1690
  • 250 $0.1630
  • 500 $0.1460
$0.1460 / $0.3060 RFQ
DISTI # SI3493DDV-T1-GE3
Avnet Asia Power MOSFET, P Channel, 20 V, 8 A, 0.02 ohm, TSOP, Surface Mount (Alt: SI3493DDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days 3000
RFQ
DISTI # SI3493DDV-T1-GE3
EBV Elektronik Power MOSFET P Channel 20 V 8 A 002 ohm TSOP Surface Mount (Alt: SI3493DDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI3493DDV-T1-GE3

SI3493DDV-T1-GE3 CAD Models

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SI3493DDV-T1-GE3 Part Data Attributes

Parametric Data
SI3493DDV-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3493DDV-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 4 Days
Date Of Intro 2017-03-22
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3.6 W
Pulsed Drain Current-Max (IDM) 32 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 205 ns
Turn-on Time-Max (ton) 83 ns

SI3493DDV-T1-GE3 Related Parts

SI3493DDV-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI3493DDV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.

  • To ensure the SI3493DDV-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.

  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI3493DDV-T1-GE3. Ensure the thermal interface material (TIM) has a thermal conductivity of at least 1 W/m-K.

  • Yes, the SI3493DDV-T1-GE3 is suitable for high-reliability applications due to its robust design, high-temperature rating, and compliance with industry standards such as AEC-Q100 and IATF 16949.

  • To troubleshoot issues with the SI3493DDV-T1-GE3, start by verifying the device is properly soldered and the PCB layout is correct. Check for signs of overheating, electrical overstress, or physical damage. Consult the datasheet and application notes for guidance on troubleshooting and fault diagnosis.

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