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Part Details for SI2308CDS-T1-GE3 by Vishay Intertechnologies
Results Overview of SI2308CDS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI2308CDS-T1-GE3 Information
SI2308CDS-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI2308CDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26AK9915
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Newark | N-Channel 60-V (D-S) Mosfet |Vishay SI2308CDS-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9000 |
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$0.0750 | Buy Now |
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DISTI #
78AC6535
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Newark | Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.12Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Vishay SI2308CDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 49 |
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$0.0790 | Buy Now |
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DISTI #
59AC7474
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Newark | N-Channel 60-V (D-S) Mosfet |Vishay SI2308CDS-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0880 / $0.1400 | Buy Now |
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DISTI #
26AK9915
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Avnet Americas | Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount - Product that comes on tape, but is not reeled (Alt: 26AK9915) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 49 Weeks, 4 Days Container: Ammo Pack | 9000 Partner Stock |
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$0.1520 / $0.4400 | Buy Now |
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DISTI #
78AC6535
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Avnet Americas | Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount - Product that comes on tape, but is not reeled (Alt: 78AC6535) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 49 Partner Stock |
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$0.1840 / $0.4720 | Buy Now |
|
DISTI #
SI2308CDS-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: SI2308CDS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.0747 / $0.0794 | Buy Now |
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DISTI #
78-SI2308CDS-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs SOT-23 RoHS: Compliant | 159332 |
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$0.0790 / $0.3800 | Buy Now |
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DISTI #
V72:2272_21388861
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Arrow Electronics | Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 29 Weeks Date Code: 2425 Container: Cut Strips | Americas - 5477 |
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$0.0921 / $0.3478 | Buy Now |
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DISTI #
V36:1790_21388861
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Arrow Electronics | Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks Date Code: 2425 | Americas - 3000 |
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$0.0776 / $0.0912 | Buy Now |
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DISTI #
87252455
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Verical | Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 667 Package Multiple: 1 | Americas - 9000 |
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$0.3626 | Buy Now |
Part Details for SI2308CDS-T1-GE3
SI2308CDS-T1-GE3 CAD Models
SI2308CDS-T1-GE3 Part Data Attributes
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SI2308CDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2308CDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 49 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 0.8 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.144 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 50 ns | |
| Turn-on Time-Max (ton) | 75 ns |
Alternate Parts for SI2308CDS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2308CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2308BDS-T1-GE3 | Vishay Intertechnologies | $0.2811 | Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | SI2308CDS-T1-GE3 vs SI2308BDS-T1-GE3 |
| SI2308BDS-T1-BE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, | SI2308CDS-T1-GE3 vs SI2308BDS-T1-BE3 |
SI2308CDS-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI2308CDS-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
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To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
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The maximum allowed voltage on the enable pin (EN) of the SI2308CDS-T1-GE3 is 6V. Exceeding this voltage may damage the device.
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Yes, the SI2308CDS-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.
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The power sequencing requirements for the SI2308CDS-T1-GE3 are critical to ensure proper device operation. It is recommended to follow the power-up and power-down sequencing guidelines provided in the datasheet to prevent damage or malfunction.