Part Details for S29GL01GS11TFV010 by Cypress Semiconductor
Results Overview of S29GL01GS11TFV010 by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S29GL01GS11TFV010 Information
S29GL01GS11TFV010 by Cypress Semiconductor is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for S29GL01GS11TFV010
S29GL01GS11TFV010 CAD Models
S29GL01GS11TFV010 Part Data Attributes
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S29GL01GS11TFV010
Cypress Semiconductor
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Datasheet
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S29GL01GS11TFV010
Cypress Semiconductor
Flash, 64MX16, 110ns, PDSO56, TSOP-56
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.1.A | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 110 ns | |
Boot Block | BOTTOM/TOP | |
Command User Interface | YES | |
Common Flash Interface | YES | |
Data Polling | YES | |
JESD-30 Code | R-PDSO-G56 | |
JESD-609 Code | e3 | |
Length | 18.4 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Sectors/Size | 1K | |
Number of Terminals | 56 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 105 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 64MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP56,.8,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Page Size | 16 words | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Seated Height-Max | 1.2 mm | |
Sector Size | 64K | |
Standby Current-Max | 0.0002 A | |
Supply Current-Max | 0.08 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Toggle Bit | YES | |
Type | NOR TYPE | |
Width | 14 mm |
Alternate Parts for S29GL01GS11TFV010
This table gives cross-reference parts and alternative options found for S29GL01GS11TFV010. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S29GL01GS11TFV010, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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S29GL01GS11TFV010 | Infineon Technologies AG | Check for Price | Flash, 128MX8, 110ns, PDSO56, | S29GL01GS11TFV010 vs S29GL01GS11TFV010 |
S29GL01GS11TFV010 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the S29GL01GS11TFV010 is 2.7V to 3.6V.
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The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation from where it was paused.
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The WEL signal is used to enable or disable write operations. When WEL is high, write operations are enabled, and when it's low, write operations are disabled.
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The S29GL01GS11TFV010 is a 1Gb (128MB) flash memory device, organized as 8192 blocks of 128KB each, with 8 pages of 16KB each.
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The S29GL01GS11TFV010 supports up to 100,000 erase cycles per block.