Datasheets
S25FS512SAGNFB010 by:

Flash, 64MX8, PDSO8, WSON-8

Part Details for S25FS512SAGNFB010 by Infineon Technologies AG

Results Overview of S25FS512SAGNFB010 by Infineon Technologies AG

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S25FS512SAGNFB010 Information

S25FS512SAGNFB010 by Infineon Technologies AG is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for S25FS512SAGNFB010

Part # Distributor Description Stock Price Buy
DISTI # 448-S25FS512SAGNFB010-ND
DigiKey IC FLASH 512MBIT SPI/QUAD 8WSON Min Qty: 1 Lead time: 12 Weeks Container: Tray 839
In Stock
  • 1 $6.4700
  • 10 $6.0180
  • 25 $5.8344
  • 50 $5.6956
  • 100 $5.5576
  • 338 $5.3181
  • 676 $5.1842
  • 1,014 $5.1250
$5.1250 / $6.4700 Buy Now
DISTI # S25FS512SAGNFB010
Avnet Americas NOR Flash 512Mbit 128M X 4Bit/256M X 2Bit/512M X 1Bit Serial-SPI 8-Pin WSON Tray - Trays (Alt: S25FS512SAGNFB010) RoHS: Compliant Min Qty: 676 Package Multiple: 676 Lead time: 12 Weeks, 0 Days Container: Tray 0
  • 676 $5.2890
  • 1,352 $5.2070
  • 2,704 $5.1250
  • 4,056 $5.0424
  • 5,408 $4.9607
$4.9607 / $5.2890 Buy Now
DISTI # 727-S25FS512SANFB010
Mouser Electronics NOR Flash Nor RoHS: Compliant 585
  • 1 $6.4700
  • 10 $6.0200
  • 25 $5.8400
  • 50 $5.7000
  • 100 $5.5600
  • 250 $5.3200
  • 676 $5.1200
$5.1200 / $6.4700 Buy Now
DISTI # 86142380
Verical NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tray Automotive AEC-Q100 RoHS: Compliant Min Qty: 56 Package Multiple: 1 Date Code: 2201 Americas - 616
  • 56 $6.7375
$6.7375 Buy Now
DISTI # 86142060
Verical NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tray Automotive AEC-Q100 RoHS: Compliant Min Qty: 56 Package Multiple: 1 Date Code: 2101 Americas - 222
  • 56 $6.7375
$6.7375 Buy Now
Rochester Electronics S25FS512S - 512-Mbit MIRRORBIT Flash Memory RoHS: Compliant Status: Active Min Qty: 1 838
  • 25 $5.3900
  • 100 $5.1300
  • 500 $4.8600
  • 1,000 $4.5900
  • 10,000 $4.3200
$4.3200 / $5.3900 Buy Now

Part Details for S25FS512SAGNFB010

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S25FS512SAGNFB010 Part Data Attributes

S25FS512SAGNFB010 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
S25FS512SAGNFB010 Infineon Technologies AG Flash, 64MX8, PDSO8, WSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description WSON-8
Reach Compliance Code compliant
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Clock Frequency-Max (fCLK) 133 MHz
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Length 8 mm
Memory Density 536870912 bit
Memory IC Type FLASH
Memory Width 8
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 8
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Organization 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code HVSON
Package Equivalence Code SOLCC8,.3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL
Programming Voltage 1.8 V
Screening Level AEC-Q100
Seated Height-Max 0.8 mm
Serial Bus Type QSPI
Standby Current-Max 0.0001 A
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 2 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL
Type NOR TYPE
Width 6 mm
Write Protection HARDWARE/SOFTWARE

S25FS512SAGNFB010 Related Parts

S25FS512SAGNFB010 Frequently Asked Questions (FAQ)

  • The S25FS512SAGNFB010 has an operating temperature range of -40°C to +85°C, with an extended temperature range of -40°C to +105°C for industrial grade devices.

  • The HOLD# pin should be driven low during read and write operations to prevent the device from entering a low-power state. It's recommended to tie the HOLD# pin to VCC or use an external pull-up resistor to ensure it remains high during normal operation.

  • The recommended power-up sequence is to apply VCC first, followed by the input signals (e.g., CE#, OE#, WE#, etc.). This ensures that the device is properly initialized and ready for operation.

  • The WP# pin is an active low input that enables or disables write protection. When WP# is low, the device is write-protected, and when it's high, the device is not write-protected. It's recommended to tie the WP# pin to VCC or use an external pull-up resistor to ensure it remains high during normal operation.

  • The S25FS512SAGNFB010 has a minimum of 100,000 erase cycles per sector, with a total of 4,096 sectors. This means the device can withstand a total of at least 409,600,000 erase cycles.

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