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PSMN018-80YS - N-channel LFPAK 80 V 18 mΩ standard level MOSFET@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN018-80YS,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
1727-4627-1-ND
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DigiKey | MOSFET N-CH 80V 45A LFPAK56 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
4407 In Stock |
|
$0.3375 / $1.1400 | Buy Now |
DISTI #
PSMN018-80YS,115
|
Avnet Americas | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN018-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.2835 / $0.3333 | Buy Now |
DISTI #
771-PSMN01880YS115
|
Mouser Electronics | MOSFETs N-channel 100 V, 19 mohm logic level MOSFET in LFPAK56 RoHS: Compliant | 2794 |
|
$0.3380 / $1.1400 | Buy Now |
DISTI #
V36:1790_06540796
|
Arrow Electronics | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks Date Code: 2428 | Americas - 3000 |
|
$0.2973 / $0.3096 | Buy Now |
DISTI #
E02:0323_03089715
|
Arrow Electronics | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks Date Code: 2415 | Europe - 1500 |
|
$0.3493 | Buy Now |
DISTI #
V72:2272_06540796
|
Arrow Electronics | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2326 Container: Cut Strips | Americas - 11 |
|
$0.3195 | Buy Now |
DISTI #
87803528
|
Verical | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Date Code: 2415 | Americas - 1500 |
|
$0.3800 / $0.3870 | Buy Now |
|
Future Electronics | PSMN018 Series 80 V 18 mOhm 26 nC SMT N-Channel Standard Level MOSFET - LFPAK-56 Min Qty: 1500 Package Multiple: 1500 |
24000 null |
|
$0.3200 / $0.3300 | Buy Now |
DISTI #
PSMN018-80YS.115
|
TME | Transistor: N-MOSFET, unipolar, 80V, 45A, 89W Min Qty: 1 | 1476 |
|
$0.3810 / $0.7310 | Buy Now |
DISTI #
PSMN018-80YS,115
|
Avnet Asia | Trans MOSFET N-CH 80V 45A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN018-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.2926 / $0.3272 | Buy Now |
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PSMN018-80YS,115
Nexperia
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Datasheet
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PSMN018-80YS,115
Nexperia
PSMN018-80YS - N-channel LFPAK 80 V 18 mΩ standard level MOSFET@en-us SOIC 4-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | LFPAK-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 64 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 45 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 182 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for PSMN018-80YS,115 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 4.5mm x 4.5mm.
To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and consider using a heat sink or thermal interface material to reduce thermal resistance.
The maximum allowed voltage on the gate of PSMN018-80YS,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
Yes, PSMN018-80YS,115 can be used in a parallel configuration to increase current handling, but ensure that the devices are matched in terms of threshold voltage and on-resistance to minimize current imbalance and thermal runaway.
To protect PSMN018-80YS,115 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and components are designed with ESD protection in mind, such as using ESD protection diodes or resistors.