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PSMN012-80PS - N-channel 80 V 11 mΩ standard level MOSFET@en-us TO-220 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN012-80PS,127 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
PSMN012-80PS,127
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Avnet Americas | Trans MOSFET N-CH 80V 74A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: PSMN012-80PS,127) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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$0.7789 / $0.9155 | Buy Now |
DISTI #
86136850
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Verical | Trans MOSFET N-CH 80V 74A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 289 Package Multiple: 1 Date Code: 2001 | Americas - 1755 |
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$0.8070 / $1.3000 | Buy Now |
DISTI #
86126833
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Verical | Trans MOSFET N-CH 80V 74A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 289 Package Multiple: 1 Date Code: 1801 | Americas - 887 |
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$0.8070 / $1.3000 | Buy Now |
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Rochester Electronics | PSMN012-80PS - 74A, 80V, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 2642 |
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$0.6456 / $1.0400 | Buy Now |
DISTI #
PSMN012-80PS.127
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TME | Transistor: N-MOSFET, unipolar, 80V, 52A, Idm: 295A, 148W Min Qty: 1 | 4558 |
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$0.9700 / $1.5800 | Buy Now |
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PSMN012-80PS,127
Nexperia
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Datasheet
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PSMN012-80PS,127
Nexperia
PSMN012-80PS - N-channel 80 V 11 mΩ standard level MOSFET@en-us TO-220 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-220 | |
Package Description | SC-46, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT78 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 74 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 295 A | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for PSMN012-80PS,127 is a standard SOT223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure reliable operation of PSMN012-80PS,127 in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management, and ensuring that the device is operated within its specified temperature range.
The maximum allowed voltage on the gate of PSMN012-80PS,127 is 20V, as specified in the datasheet. Exceeding this voltage may damage the device.
Yes, PSMN012-80PS,127 is suitable for switching applications due to its low RDS(on) and high current capability. However, it is essential to ensure that the device is operated within its specified switching frequency and duty cycle to avoid overheating and premature failure.
To protect PSMN012-80PS,127 from electrostatic discharge (ESD), it is recommended to follow proper ESD handling and storage procedures, including using ESD-safe packaging, handling the device by the body, and avoiding direct contact with the device pins.