Part Details for PSMN009-100P,127 by NXP Semiconductors
Results Overview of PSMN009-100P,127 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN009-100P,127 Information
PSMN009-100P,127 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN009-100P,127
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86023107
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Verical | Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 223 Package Multiple: 1 Date Code: 1001 | Americas - 291 |
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$1.4250 / $1.6875 | Buy Now |
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Rochester Electronics | PSMN009-100P - 75A, 100V, 0.0088ohm, N-Channel Power MOSFET, SIL3P RoHS: Compliant Status: Active Min Qty: 1 | 291 |
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$1.1400 / $1.4200 | Buy Now |
Part Details for PSMN009-100P,127
PSMN009-100P,127 CAD Models
PSMN009-100P,127 Part Data Attributes
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PSMN009-100P,127
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN009-100P,127
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220 | |
| Package Description | PLASTIC, SC-46, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT78 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN009-100P,127
This table gives cross-reference parts and alternative options found for PSMN009-100P,127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN009-100P,127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN009-100P | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN009-100P,127 vs PSMN009-100P |
| PSMN009-100P | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 100 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | PSMN009-100P,127 vs PSMN009-100P |
| BUK7510-100B,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS standard level FET TO-220 3-Pin | PSMN009-100P,127 vs BUK7510-100B,127 |
| BUK9510-100B,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS logic level FET TO-220 3-Pin | PSMN009-100P,127 vs BUK9510-100B,127 |
| BUK7515-100A | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | PSMN009-100P,127 vs BUK7515-100A |
| 934055409127 | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | PSMN009-100P,127 vs 934055409127 |
| BUK9515-100A | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power | PSMN009-100P,127 vs BUK9515-100A |
| BUK7515-100A,127 | Nexperia | Check for Price | N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin | PSMN009-100P,127 vs BUK7515-100A,127 |
| BUK7510-100B | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN009-100P,127 vs BUK7510-100B |
| PSMN015-100P | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN009-100P,127 vs PSMN015-100P |
PSMN009-100P,127 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for PSMN009-100P,127 is -55°C to 150°C.
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To ensure safe operating area (SOA) for PSMN009-100P,127, you should limit the voltage and current according to the datasheet, and also consider the thermal characteristics, such as junction temperature and thermal resistance.
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For PSMN009-100P,127, a good PCB layout should minimize parasitic inductance and resistance, and ensure good thermal dissipation. A recommended layout includes using a copper pour for heat sinking, and keeping the drain and source connections short and wide.
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Yes, PSMN009-100P,127 is suitable for high-frequency switching applications due to its low gate charge, low RDS(on), and fast switching times. However, you should consider the MOSFET's parasitic capacitances and inductances, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.
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To select the right gate driver for PSMN009-100P,127, consider the MOSFET's gate charge, threshold voltage, and switching frequency. Choose a gate driver that can provide sufficient current and voltage to quickly charge and discharge the gate, and ensure proper timing and synchronization with the rest of the circuit.