Part Details for PJA3407_R1_00001 by PanJit Semiconductor
Results Overview of PJA3407_R1_00001 by PanJit Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
PJA3407_R1_00001 Information
PJA3407_R1_00001 by PanJit Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PJA3407_R1_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJA3407_R1_00001
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Mouser Electronics | MOSFETs 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant | 15944 |
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$0.0730 / $0.4500 | Buy Now |
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DISTI #
PJA3407-R1
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TME | Transistor: P-MOSFET, unipolar, -30V, -3.8A, Idm: -15.2A, 1.25W Min Qty: 1 | 2975 |
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$0.0650 / $0.3280 | Buy Now |
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NAC | 30V P-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.0440 / $0.0520 | Buy Now |
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DISTI #
PJA3407_R1_00001
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Avnet Silica | (Alt: PJA3407_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for PJA3407_R1_00001
PJA3407_R1_00001 CAD Models
PJA3407_R1_00001 Part Data Attributes
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PJA3407_R1_00001
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
PJA3407_R1_00001
PanJit Semiconductor
Power Field-Effect Transistor, 3.8A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 15.2 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PJA3407_R1_00001
This table gives cross-reference parts and alternative options found for PJA3407_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3407_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| DMP3099L-13 | Diodes Incorporated | $0.0687 | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PJA3407_R1_00001 vs DMP3099L-13 |
| DMP3098L-7 | Diodes Incorporated | $0.0997 | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PJA3407_R1_00001 vs DMP3098L-7 |
| DMP3099L-7 | Diodes Incorporated | $0.1001 | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PJA3407_R1_00001 vs DMP3099L-7 |
| PJS6401_S1_00001 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | PJA3407_R1_00001 vs PJS6401_S1_00001 |
| S-LP2305LT1G | LRC Leshan Radio Co Ltd | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN | PJA3407_R1_00001 vs S-LP2305LT1G |
| PJS6405_S1_00001 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | PJA3407_R1_00001 vs PJS6405_S1_00001 |
| ELM33413CA-S | ELM Technology Corp | Check for Price | Power Field-Effect Transistor, 4A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | PJA3407_R1_00001 vs ELM33413CA-S |
| CPH3308 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 4A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CPH3, 3 PIN | PJA3407_R1_00001 vs CPH3308 |
| S-LP2305LT3G | LRC Leshan Radio Co Ltd | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN | PJA3407_R1_00001 vs S-LP2305LT3G |
PJA3407_R1_00001 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from the power plane to minimize noise and EMI.
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Follow the recommended operating conditions, ensure proper thermal management (e.g., heat sinks, thermal pads), and consider using a temperature sensor to monitor the device temperature.
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The built-in ESD protection is designed to protect against human body model (HBM) and charged device model (CDM) events. However, it may not provide sufficient protection against more severe ESD events or other types of electrical overstress. Additional external protection may be necessary in harsh environments.
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The PJA3407_R1_00001 is a commercial-grade device, and its reliability and fault tolerance may not meet the requirements of high-reliability or safety-critical applications. Consult with PanJit Semiconductor or a qualified reliability engineer to determine the device's suitability for such applications.
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Consult the datasheet and application notes for troubleshooting guidelines. Use oscilloscopes, logic analyzers, or other diagnostic tools to identify the root cause of the issue. If necessary, contact PanJit Semiconductor's technical support or a qualified engineer for assistance.