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Part Details for PJA3406_R1_00001 by PanJit Semiconductor
Results Overview of PJA3406_R1_00001 by PanJit Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
PJA3406_R1_00001 Information
PJA3406_R1_00001 by PanJit Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CO-059BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-059BNCX200-001 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 1ft | |
| CO-058SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft | |
| CS-USBAA00000-001 | Amphenol Cables on Demand | Amphenol CS-USBAA00000-001 Molded USB 2.0 Cable - Type A-A 1m |
Price & Stock for PJA3406_R1_00001
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
241-PJA3406_R1_00001
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Mouser Electronics | MOSFETs 30V N-Channel Enhancement Mode MOSFET RoHS: Compliant | 434542 |
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$0.0540 / $0.2900 | Buy Now |
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DISTI #
87657192
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Verical | PJA3406_R1_00001 Min Qty: 887 Package Multiple: 1 | Americas - 2819 |
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$0.0895 / $0.1850 | Buy Now |
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DISTI #
PJA3406-R1
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TME | Transistor: N-MOSFET, unipolar, 30V, 4.4A, Idm: 17.6A, 1.25W, SOT23 Min Qty: 1 | 2490 |
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$0.0507 / $0.3221 | Buy Now |
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NAC | 30V N-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.0430 / $0.0500 | Buy Now |
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Chip 1 Exchange | INSTOCK | 161376 |
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RFQ | |
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DISTI #
PJA3406_R1_00001
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Avnet Silica | 125W30V44AMOSFETSOT23SINGLE NCH (Alt: PJA3406_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | 3000 |
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RFQ |
Part Details for PJA3406_R1_00001
PJA3406_R1_00001 CAD Models
PJA3406_R1_00001 Part Data Attributes
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PJA3406_R1_00001
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
PJA3406_R1_00001
PanJit Semiconductor
Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | PANJIT | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17.6 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PJA3406_R1_00001
This table gives cross-reference parts and alternative options found for PJA3406_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJA3406_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2316BDS-T1-E3 | Vishay Intertechnologies | $0.2838 | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | PJA3406_R1_00001 vs SI2316BDS-T1-E3 |
| PJA3406_R2_00001 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PJA3406_R1_00001 vs PJA3406_R2_00001 |
| SI2316BDS-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | PJA3406_R1_00001 vs SI2316BDS-T1-E3 |
| SI2316BDS-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | PJA3406_R1_00001 vs SI2316BDS-T1-GE3 |
| SI2316BDS-T1-BE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | PJA3406_R1_00001 vs SI2316BDS-T1-BE3 |
| TSM414K34CSRL | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | PJA3406_R1_00001 vs TSM414K34CSRL |
| SI2304DDS-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | PJA3406_R1_00001 vs SI2304DDS-T1-GE3 |
| PJA3402_R1_00001 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PJA3406_R1_00001 vs PJA3402_R1_00001 |
PJA3406_R1_00001 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from the power plane to minimize noise and EMI.
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Use a thermal pad or a heat sink to dissipate heat, and ensure good airflow around the device. Also, follow the recommended operating conditions and derating guidelines in the datasheet.
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The PJA3406_R1_00001 has built-in ESD protection diodes, but it's still recommended to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure that the device is operated within the recommended voltage and current limits.
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While the PJA3406_R1_00001 is a high-quality device, it's essential to consult with PanJit Semiconductor or a qualified representative to determine its suitability for high-reliability or automotive applications, as additional testing and validation may be required.
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Follow the recommended soldering temperature profile and rework conditions specified in the datasheet or in PanJit Semiconductor's application notes to ensure reliable assembly and minimize the risk of damage.