Part Details for PHN210T,118 by NXP Semiconductors
Results Overview of PHN210T,118 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
PHN210T,118 Information
PHN210T,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHN210T,118
PHN210T,118 CAD Models
PHN210T,118 Part Data Attributes
|
|
PHN210T,118
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PHN210T,118
NXP Semiconductors
PHN210T - Dual N-channel TrenchMOS intermediate level FET SOIC 8-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | SOT96-1 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHN210T,118
This table gives cross-reference parts and alternative options found for PHN210T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS6892A | onsemi | Check for Price | Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ, SOIC-8, 2500-REEL | PHN210T,118 vs FDS6892A |
| AP4405GM | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 14 A, 30 V, 0.0082 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | PHN210T,118 vs AP4405GM |
| RF1K49223 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | PHN210T,118 vs RF1K49223 |
| SI5902BDC-T1-GE3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | PHN210T,118 vs SI5902BDC-T1-GE3 |
| TPC8A01 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 8.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-6J1E, 8 PIN, FET General Purpose Power | PHN210T,118 vs TPC8A01 |
| IRF7706GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | PHN210T,118 vs IRF7706GPBF |
| FDFS6N303 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | PHN210T,118 vs FDFS6N303 |
PHN210T,118 Frequently Asked Questions (FAQ)
-
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Use a 50-ohm microstrip transmission line for the RF signal path.
-
Use a thermal pad or a heat sink with a thermal conductivity of at least 1 W/mK. Ensure good thermal contact between the device and the thermal pad/heat sink. Keep the ambient temperature below 85°C.
-
The recommended input impedance is 50 ohms, and the output impedance is 50 ohms or lower. Impedance matching is crucial for optimal power transfer and minimal signal reflection.
-
Power up the device in the following sequence: VCC, VEN, and then RF input. Ensure a monotonic power-up sequence to prevent latch-up or damage. Use a soft-start circuit to limit inrush current.
-
Place decoupling capacitors as close as possible to the device's power pins. Use a low-ESR capacitor (e.g., 100 nF, 0402 package) and a larger capacitor (e.g., 1 μF, 0603 package) in parallel. Ensure the capacitors are connected to a solid ground plane.