Part Details for PD57060-E by STMicroelectronics
Results Overview of PD57060-E by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
PD57060-E Information
PD57060-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD57060-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH6877
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Newark | Rf Fet, N-Channel, 65V, 7A, Powerso-10Rf, Drain Source Voltage Vds:65V, Continuous Drain Current Id:7A, Power Dissipation:79W, Operating Frequency Min:-, Operating Frequency Max:1Ghz, No. Of Pins:-, Operating Temperature Max:165°C Rohs Compliant: Yes |Stmicroelectronics PD57060-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 68 |
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$46.2200 / $49.7700 | Buy Now |
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DISTI #
497-5309-5-ND
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DigiKey | RF MOSFET LDMOS 28V POWERSO10 Min Qty: 1 Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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$46.1255 / $62.7200 | Buy Now |
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DISTI #
07AH6877
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Avnet Americas | RF FET Transistor, 65 V, 7 A, 79 W, 1 GHz, PowerSO-10RF - Bulk (Alt: 07AH6877) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 31 Partner Stock |
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$50.5000 / $53.4700 | Buy Now |
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DISTI #
PD57060-E
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Avnet Americas | RF FET Transistor, 65 V, 7 A, 79 W, 1 GHz, PowerSO-10RF - Bag (Alt: PD57060-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag | 0 |
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$38.8929 / $41.3544 | Buy Now |
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DISTI #
511-PD57060-E
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Mouser Electronics | RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam RoHS: Compliant | 535 |
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$47.0800 / $54.5600 | Buy Now |
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STMicroelectronics | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs RoHS: Compliant Min Qty: 1 | 535 |
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$46.1100 / $53.4700 | Buy Now |
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DISTI #
88059449
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Verical | Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube Min Qty: 2 Package Multiple: 1 | Americas - 31 |
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$62.0473 / $69.8064 | Buy Now |
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DISTI #
PD57060-E
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TME | Transistor: N-MOSFET, unipolar, RF, 65V, 7A, 79W, PowerSO10RF, SMT Min Qty: 1 | 0 |
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$43.0900 / $58.1700 | RFQ |
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DISTI #
PD57060-E
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IBS Electronics | TRANSISTOR MOSFET N-CH 65V 7A 4-PIN (2+, 2TAB) POWERSO-10RF (FORMED LEAD) TUBE Min Qty: 400 Package Multiple: 1 | 0 |
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$55.7700 / $58.5520 | Buy Now |
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DISTI #
PD57060-E
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Avnet Silica | RF FET Transistor 65 V 7 A 79 W 1 GHz PowerSO10RF (Alt: PD57060-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 400 |
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Buy Now |
Part Details for PD57060-E
PD57060-E CAD Models
PD57060-E Part Data Attributes
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PD57060-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD57060-E
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT | |
| Package Description | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN | |
| Pin Count | 10 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 7 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.079 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for PD57060-E
This table gives cross-reference parts and alternative options found for PD57060-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57060-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD57060S-E | STMicroelectronics | $72.7139 | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs | PD57060-E vs PD57060S-E |
| PD57060S | STMicroelectronics | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, SO-2 | PD57060-E vs PD57060S |
| PD57060STR-E | STMicroelectronics | Check for Price | 60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package | PD57060-E vs PD57060STR-E |
| PD57060 | STMicroelectronics | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, SO-2 | PD57060-E vs PD57060 |
| BLF900-110 | NXP Semiconductors | Check for Price | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power | PD57060-E vs BLF900-110 |
PD57060-E Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and thermal dissipation.
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The PD57060-E has a high power dissipation, so thermal management is crucial. Use a heat sink with a thermal interface material, ensure good airflow, and follow the recommended PCB layout to minimize thermal resistance. Monitor the junction temperature (TJ) and adjust the design accordingly.
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The maximum allowed voltage on the input pins is 5.5V, as specified in the datasheet. Exceeding this voltage may damage the device. Ensure that the input voltage is within the recommended range to prevent damage or malfunction.
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Implement overcurrent protection using an external current sense resistor and a comparator or a dedicated overcurrent protection IC. Monitor the current through the sense resistor and trigger a shutdown or warning signal when the current exceeds the maximum allowed value.
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The recommended input capacitance is 10uF to 22uF, depending on the input voltage and frequency. A larger capacitance can help reduce input ripple and improve stability, but may increase the inrush current during startup.