Part Details for PD55025S-E by STMicroelectronics
Results Overview of PD55025S-E by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PD55025S-E Information
PD55025S-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD55025S-E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH6876
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Newark | Rf Fet, N-Ch, 40V, 7A, Powerso-10Rf, Drain Source Voltage Vds:40V, Continuous Drain Current Id:7A, Power Dissipation Pd:79W, Operating Frequency Min:-, Operating Frequency Max:1Ghz, Rf Transistor Case:Powerso-10Rf, No. Of Pins:-, Rohs Compliant: Yes |Stmicroelectronics PD55025S-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 80 |
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$21.4100 / $30.6200 | Buy Now |
DISTI #
497-5302-5-ND
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DigiKey | RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 1 Lead time: 23 Weeks Container: Tube |
331 In Stock |
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$19.2088 / $26.5800 | Buy Now |
DISTI #
PD55025S-E
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Avnet Americas | Transistor RF FET N-CH 40V 7A 500MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD55025S-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag | 0 |
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$18.6240 / $19.4519 | Buy Now |
DISTI #
511-PD55025S-E
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Mouser Electronics | RF MOSFET Transistors POWER RF Transistor RoHS: Compliant | 164 |
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$19.2000 / $25.0100 | Buy Now |
DISTI #
V36:1790_06556176
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Arrow Electronics | Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead) Tube Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks Date Code: 2412 | Americas - 400 |
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$19.0800 / $23.9000 | Buy Now |
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STMicroelectronics | RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs RoHS: Compliant Min Qty: 1 | 164 |
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$18.8200 / $24.5100 | Buy Now |
DISTI #
88138608
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Verical | Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead) Tube Min Qty: 400 Package Multiple: 400 Date Code: 2412 | Americas - 400 |
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$19.0800 / $23.9000 | Buy Now |
DISTI #
PD55025S-E
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TME | Transistor: N-MOSFET, unipolar, RF, 40V, 7A, 79W, PowerSO10RF, SMT Min Qty: 1 | 0 |
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$25.7500 / $38.5700 | RFQ |
DISTI #
PD55025S-E
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Avnet Silica | Transistor RF FET NCH 40V 7A 500MHz 3Pin PowerSO10RF Tube (Alt: PD55025S-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 250 |
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Buy Now | |
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Cytech Systems Limited | RF MOSFET LDMOS 12.5V PWRSO-10RF | 5000 |
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RFQ |
Part Details for PD55025S-E
PD55025S-E CAD Models
PD55025S-E Part Data Attributes
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PD55025S-E
STMicroelectronics
Buy Now
Datasheet
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PD55025S-E
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN | |
Pin Count | 10 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 23 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 7 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-F2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 165 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
PD55025S-E Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern under the device to ensure optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal conduction to the PCB and heat sink.
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STMicroelectronics recommends using a low-ESR ceramic capacitor with a value of 10uF to 22uF, depending on the specific application requirements, to ensure optimal performance and stability.
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To troubleshoot issues with the device's overcurrent protection feature, check the input voltage, output current, and sense resistor values to ensure they are within the recommended specifications, and verify that the device is properly configured and connected.
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STMicroelectronics recommends using a low-ESR ceramic capacitor with a value of 10uF to 47uF, depending on the specific application requirements, to ensure optimal performance and stability.