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Transistors / RF Power Field-Effect Transistors / PD55015S-E
Datasheets
PD55015S-E by: STMicroelectronics

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Part Details for PD55015S-E by STMicroelectronics

Results Overview of PD55015S-E by STMicroelectronics

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PD55015S-E Information

PD55015S-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PD55015S-E

Part # Distributor Description Stock Price Buy
DISTI # 497-6716-5-ND
DigiKey RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 400 Lead time: 23 Weeks Container: Tube Temporarily Out of Stock
  • 400 $15.0520
$15.0520 Buy Now
DISTI # PD55015S-E
Avnet Americas Transistor RF FET N-CH 40V 5A 500MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD55015S-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag 0
  • 400 $14.7312
  • 800 $14.6568
  • 1,600 $14.5824
  • 2,400 $14.5080
  • 3,200 $14.4336
$14.4336 / $14.7312 Buy Now
DISTI # 511-PD55015S-E
Mouser Electronics RF MOSFET Transistors POWER RF Transistor RoHS: Compliant 348
  • 1 $21.2300
  • 10 $18.8800
  • 25 $18.8600
  • 100 $16.5000
  • 250 $15.4000
  • 400 $14.8100
$14.8100 / $21.2300 Buy Now
STMicroelectronics RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs RoHS: Compliant Min Qty: 1 348
  • 1 $20.8100
  • 10 $18.5000
  • 25 $18.4800
  • 100 $16.1700
  • 250 $15.0900
  • 400 $14.5100
$14.5100 / $20.8100 Buy Now
DISTI # PD55015S-E
TME Transistor: N-MOSFET, unipolar, RF, 40V, 5A, 73W, PowerSO10RF, SMT Min Qty: 1 0
  • 1 $27.2900
  • 5 $24.5200
  • 25 $21.6500
  • 100 $19.4900
  • 500 $18.1600
$18.1600 / $27.2900 RFQ
DISTI # PD55015S-E
Avnet Silica Transistor RF FET NCH 40V 5A 500MHz 3Pin PowerSO10RF Tube (Alt: PD55015S-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PD55015S-E
EBV Elektronik Transistor RF FET NCH 40V 5A 500MHz 3Pin PowerSO10RF Tube (Alt: PD55015S-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 151
RFQ

Part Details for PD55015S-E

PD55015S-E Part Data Attributes

Parametric Data
PD55015S-E STMicroelectronics
Buy Now Datasheet
Compare Parts:
PD55015S-E STMicroelectronics RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 73 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PD55015S-E

This table gives cross-reference parts and alternative options found for PD55015S-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55015S-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD55015-E STMicroelectronics $16.7000 RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs PD55015S-E vs PD55015-E
PD55015TR-E STMicroelectronics Check for Price RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs PD55015S-E vs PD55015TR-E

PD55015S-E Related Parts

PD55015S-E Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the PD55015S-E is -40°C to 125°C.

  • The PD55015S-E requires a single 3.3V power supply, and it's recommended to use a decoupling capacitor (e.g., 100nF) close to the VCC pin to ensure stable operation.

  • The PD55015S-E supports data transfer rates up to 5 Gbps.

  • To configure the PD55015S-E for USB-C Alt Mode, you need to set the MODE pin to '1' and use the I2C interface to configure the device. Refer to the datasheet for specific register settings.

  • Yes, the PD55015S-E is designed for Power Delivery (PD) applications and supports up to 100W of power delivery.

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