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NX138AK - 60 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NX138AKR by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-2731-1-ND
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DigiKey | MOSFET N-CH 60V 190MA TO236AB Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9500 In Stock |
|
$0.0154 / $0.1500 | Buy Now |
DISTI #
NX138AKR
|
Avnet Americas | Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB T/R - Tape and Reel (Alt: NX138AKR) RoHS: Compliant Min Qty: 48000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0138 / $0.0141 | Buy Now |
DISTI #
771-NX138AKR
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Mouser Electronics | MOSFETs 60 V, dual N-channel Trench MOSFET RoHS: Compliant | 242666 |
|
$0.0160 / $0.1500 | Buy Now |
DISTI #
E02:0323_10321923
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Arrow Electronics | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2508 | Europe - 105000 |
|
$0.0150 / $0.0162 | Buy Now |
DISTI #
V36:1790_16421369
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2405 | Americas - 12000 |
|
$0.0145 / $0.0172 | Buy Now |
DISTI #
86007554
|
Verical | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 15152 Package Multiple: 1 Date Code: 2001 | Americas - 5028000 |
|
$0.0208 / $0.0248 | Buy Now |
DISTI #
48100313
|
Verical | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Americas - 105000 |
|
$0.0244 | Buy Now |
DISTI #
86008155
|
Verical | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 15152 Package Multiple: 1 Date Code: 1901 | Americas - 21000 |
|
$0.0208 / $0.0248 | Buy Now |
DISTI #
78956150
|
Verical | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2405 | Americas - 12000 |
|
$0.0145 / $0.0172 | Buy Now |
DISTI #
87173788
|
Verical | Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1839 Package Multiple: 1 Date Code: 2223 | Americas - 9869 |
|
$0.0309 / $0.0940 | Buy Now |
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NX138AKR
Nexperia
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Datasheet
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NX138AKR
Nexperia
NX138AK - 60 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.19 A | |
Drain-source On Resistance-Max | 4.5 Ω | |
FET Technology | TRENCH MOSFET | |
Feedback Cap-Max (Crss) | 1.5 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.33 W | |
Pulsed Drain Current-Max (IDM) | 0.765 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NX138AKR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NX138AKR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
934070096215 | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | NX138AKR vs 934070096215 |
934070096235 | Nexperia | Check for Price | Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | NX138AKR vs 934070096235 |
The recommended PCB footprint for the NX138AKR is a 0402 package with a land pattern of 0.5 mm x 0.3 mm. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
To handle thermal management, ensure a good thermal connection between the device and a heat sink or a thermal pad. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK. Keep the device's junction temperature (Tj) below 150°C to ensure reliable operation.
The maximum allowed voltage on the input pins of the NX138AKR is 5.5 V. Exceeding this voltage may cause damage to the device or affect its reliability.
Yes, the NX138AKR is suitable for high-frequency applications up to 100 MHz. However, ensure proper PCB layout, decoupling, and signal integrity to minimize signal degradation and electromagnetic interference (EMI).
To ensure EMC, follow proper PCB design guidelines, use a ground plane, and add decoupling capacitors close to the device. Shielding and filtering may be necessary depending on the application and environment.