Part Details for NTHD4P02FT1G by Rochester Electronics LLC
Results Overview of NTHD4P02FT1G by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NTHD4P02FT1G Information
NTHD4P02FT1G by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTHD4P02FT1G
NTHD4P02FT1G CAD Models
NTHD4P02FT1G Part Data Attributes
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NTHD4P02FT1G
Rochester Electronics LLC
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Datasheet
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NTHD4P02FT1G
Rochester Electronics LLC
2.2A, 20V, 0.155ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | LEAD FREE, CASE 1206A-03, CHIPFET-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 1206A-03 | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTHD4P02FT1G
This table gives cross-reference parts and alternative options found for NTHD4P02FT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHD4P02FT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTHD4P02FT1 | onsemi | Check for Price | Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL | NTHD4P02FT1G vs NTHD4P02FT1 |