Part Details for NTHD3100CT1G by onsemi
Results Overview of NTHD3100CT1G by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTHD3100CT1G Information
NTHD3100CT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHD3100CT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
86AK5823
|
Newark | Mosfet, N And P Ch, -20V, -3.9A, Chipfet, Transistor Polarity:N And P Channel, Continuous Drain Current Id:-3.9A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.064Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Rohs Compliant: Yes |Onsemi NTHD3100CT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 3000 |
|
$0.4210 / $0.5380 | Buy Now |
|
DISTI #
50AC6487
|
Newark | Mosfet, N/P-Ch, 20 V, 3.9A, Chipfet, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:3.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3100CT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.5750 / $1.4300 | Buy Now |
|
DISTI #
45J2138
|
Newark | Dual P Channel Mosfet, -20V, 1206A, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:3.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3100CT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3880 / $0.4030 | Buy Now |
|
DISTI #
NTHD3100CT1GOSCT-ND
|
DigiKey | MOSFET N/P-CH 20V 2.9A CHIPFET Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1048 In Stock |
|
$0.3725 / $1.5600 | Buy Now |
|
DISTI #
863-NTHD3100CT1G
|
Mouser Electronics | MOSFETs 20V +3.9A/-4.4A Complementary RoHS: Compliant | 12220 |
|
$0.3840 / $1.4400 | Buy Now |
|
|
Onlinecomponents.com | IC, Transistor, Mosfet, Dual P-Channel, 20V, 2.9A, Cut Tape | ON Semiconductor NTHD3100CT1G RoHS: Compliant | 0 |
|
$0.3630 / $0.4260 | Buy Now |
|
|
Bristol Electronics | 11538 |
|
RFQ | ||
|
DISTI #
NTHD3100CT1G
|
TME | Transistor: N/P-MOSFET, unipolar, complementary pair, 20/-20V Min Qty: 1 | 2125 |
|
$0.4670 / $1.1020 | Buy Now |
|
DISTI #
NTHD3100CT1G
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
|
$0.3700 | Buy Now |
|
DISTI #
NTHD3100CT1G
|
Avnet Asia | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R (Alt: NTHD3100CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | 0 |
|
$0.3506 / $0.3921 | Buy Now |
Part Details for NTHD3100CT1G
NTHD3100CT1G CAD Models
NTHD3100CT1G Part Data Attributes
|
|
NTHD3100CT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTHD3100CT1G
onsemi
Complementary ChipFET™ Power MOSFET 20V, ChipFET, 3000-REEL
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | ChipFET | |
| Package Description | CHIPFET-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.9 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.1 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTHD3100CT1G Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
-
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
-
The SOA is typically defined by the device's voltage and current ratings. For the NTHD3100CT1G, the SOA is limited by the maximum voltage rating of 100V and the maximum current rating of 30A.
-
Use ESD protection devices, such as TVS diodes or ESD suppressors, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.
-
A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the specific requirements may vary depending on the application and PCB layout.