Part Details for NAND256W3A0AN6E by STMicroelectronics
Results Overview of NAND256W3A0AN6E by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
NAND256W3A0AN6E Information
NAND256W3A0AN6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for NAND256W3A0AN6E
NAND256W3A0AN6E CAD Models
NAND256W3A0AN6E Part Data Attributes
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NAND256W3A0AN6E
STMicroelectronics
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Datasheet
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NAND256W3A0AN6E
STMicroelectronics
32MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TSOP | |
| Package Description | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Access Time-Max | 35 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3/e6 | |
| Length | 18.4 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 2K | |
| Number of Terminals | 48 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP1 | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Page Size | 512 words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 16K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Toggle Bit | NO | |
| Type | SLC NAND TYPE | |
| Width | 12 mm |
Alternate Parts for NAND256W3A0AN6E
This table gives cross-reference parts and alternative options found for NAND256W3A0AN6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND256W3A0AN6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| NAND256W3A2AN6F | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A0AN6E vs NAND256W3A2AN6F |
| NAND256W3A2CN6F | STMicroelectronics | Check for Price | 32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A0AN6E vs NAND256W3A2CN6F |
| NAND256W3A0BN6F | Micron Technology Inc | Check for Price | Flash, 32MX8, 35ns, PDSO48, TSOP-48 | NAND256W3A0AN6E vs NAND256W3A0BN6F |
| NAND256W3A0AN6F | Numonyx Memory Solutions | Check for Price | Flash, 32MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND256W3A0AN6E vs NAND256W3A0AN6F |
NAND256W3A0AN6E Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the NAND256W3A0AN6E is -40°C to 85°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically -55°C to 125°C.
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The NAND256W3A0AN6E has a built-in bad block management mechanism. During manufacturing, STMicroelectronics marks bad blocks as invalid. When a bad block is detected, the device will automatically remap the data to a spare block. However, it's still recommended to implement a bad block management scheme in your firmware to handle potential bad blocks that may develop during the device's lifetime.
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The typical write endurance of the NAND256W3A0AN6E is around 3,000 to 5,000 program/erase cycles per block, depending on the operating conditions and usage patterns. However, it's essential to note that this value can vary depending on the specific application and usage scenario.
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The NAND256W3A0AN6E has built-in error correction mechanisms, including ECC (Error-Correcting Code) and CRC (Cyclic Redundancy Check). To ensure data integrity, it's recommended to implement a robust error correction scheme in your firmware, such as BCH (Bose-Chaudhuri-Hocquenghem) or Reed-Solomon coding, in addition to the built-in ECC and CRC mechanisms.
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The recommended power-up sequence for the NAND256W3A0AN6E is to apply VCC first, followed by VPP (if used), and then the clock signal. During power-down, the sequence should be reversed. It's essential to ensure that the power supply is stable and within the recommended voltage range to prevent damage to the device.