Part Details for NAND01GW3B2AN6 by Micron Technology Inc
Results Overview of NAND01GW3B2AN6 by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NAND01GW3B2AN6 Information
NAND01GW3B2AN6 by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for NAND01GW3B2AN6
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NAND01GW3B2AN6
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Avnet Americas | - Trays (Alt: NAND01GW3B2AN6) RoHS: Not Compliant Min Qty: 576 Package Multiple: 576 Lead time: 18 Weeks, 0 Days Container: Tray | 0 |
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RFQ |
Part Details for NAND01GW3B2AN6
NAND01GW3B2AN6 CAD Models
NAND01GW3B2AN6 Part Data Attributes
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NAND01GW3B2AN6
Micron Technology Inc
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Datasheet
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NAND01GW3B2AN6
Micron Technology Inc
Flash, 128MX8, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | TSOP | |
Package Description | 12 X 20 MM, PLASTIC, TSOP-48 | |
Pin Count | 48 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Factory Lead Time | 18 Weeks | |
Access Time-Max | 35 ns | |
JESD-30 Code | R-PDSO-G48 | |
Length | 18.4 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 48 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 128MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 3 V | |
Seated Height-Max | 1.2 mm | |
Supply Current-Max | 0.03 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Type | NAND TYPE | |
Width | 12 mm |
Alternate Parts for NAND01GW3B2AN6
This table gives cross-reference parts and alternative options found for NAND01GW3B2AN6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND01GW3B2AN6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NAND01GW3B3CN1F | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3B3CN1F |
NAND01GW3B3AV6 | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | NAND01GW3B2AN6 vs NAND01GW3B3AV6 |
NAND01GW3B3CV6T | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48 | NAND01GW3B2AN6 vs NAND01GW3B3CV6T |
NAND01GW3B2BN1 | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3B2BN1 |
NAND01GW3A2AN6 | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3A2AN6 |
NAND01GW3A0CN6F | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3A0CN6F |
NAND01GW3A2CN1E | STMicroelectronics | Check for Price | 128MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3A2CN1E |
NAND01GW3B3AN1 | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | NAND01GW3B2AN6 vs NAND01GW3B3AN1 |
NAND01GW3B3CV6E | Numonyx Memory Solutions | Check for Price | Flash, 128MX8, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 | NAND01GW3B2AN6 vs NAND01GW3B3CV6E |
NAND01GW3B2AN6 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the NAND01GW3B2AN6 is -40°C to 85°C, but it can tolerate storage temperatures from -40°C to 150°C.
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The POR sequence is not explicitly stated in the datasheet, but it's recommended to follow a slow power ramp-up (typically 10-20 ms) to ensure a stable power supply before accessing the device.
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The maximum number of program/erase cycles for the NAND01GW3B2AN6 is 3,000 to 5,000 cycles, depending on the specific application and usage patterns.
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The NAND01GW3B2AN6 uses a BCH error correction code (ECC) with a strength of 4-8 bits per 512-byte sector. You can implement ECC using hardware or software-based solutions, such as the Micron-provided ECC calculator tool.
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The typical write endurance for the NAND01GW3B2AN6 is around 1-2 GB per day, depending on the specific usage patterns and write traffic.