Part Details for MWI200-06A8 by IXYS Corporation
Results Overview of MWI200-06A8 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MWI200-06A8 Information
MWI200-06A8 by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MWI200-06A8
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MWI200-06A8
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TME | Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 | 0 |
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$142.6000 / $179.5300 | RFQ |
Part Details for MWI200-06A8
MWI200-06A8 CAD Models
MWI200-06A8 Part Data Attributes
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MWI200-06A8
IXYS Corporation
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Datasheet
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MWI200-06A8
IXYS Corporation
Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | SIXPACK-19 | |
Pin Count | 19 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 225 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X19 | |
JESD-609 Code | e3 | |
Number of Elements | 6 | |
Number of Terminals | 19 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 675 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 340 ns | |
Turn-on Time-Nom (ton) | 230 ns | |
VCEsat-Max | 2.5 V |
MWI200-06A8 Frequently Asked Questions (FAQ)
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A good thermal management strategy is crucial for the MWI200-06A8. IXYS recommends a PCB layout with a large copper area for heat dissipation, and a thermal pad on the bottom of the device. A heat sink or a thermal interface material can also be used to improve heat dissipation.
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To ensure reliable operation, it's essential to operate the MWI200-06A8 within its specified temperature range (TJ = -40°C to 150°C). Monitor the device's temperature and adjust the cooling system accordingly. Also, ensure that the device is not subjected to excessive voltage or current stress.
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The MWI200-06A8 is a sensitive device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Avoid touching the leads or pins, and store the device in an anti-static bag or container.
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While the MWI200-06A8 is a high-performance device, it may not meet the specific requirements of high-reliability or aerospace applications. IXYS recommends consulting their application notes and reliability reports to determine the device's suitability for such applications.
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Common issues with the MWI200-06A8 include overheating, electrical overstress, and poor PCB layout. To troubleshoot, check the device's temperature, voltage, and current ratings. Verify the PCB layout and thermal management strategy. Consult IXYS' application notes and technical support resources for further assistance.