Part Details for MW6S010NR1 by NXP Semiconductors
Results Overview of MW6S010NR1 by NXP Semiconductors
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MW6S010NR1 Information
MW6S010NR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MW6S010NR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81K3652
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Newark | Rf Mosfet, N Channel, 68V, To-270, Drain Source Voltage Vds:68V, Continuous Drain Current Id:-, Power Dissipation:-, Operating Frequency Min:450Mhz, Operating Frequency Max:900Mhz, No. Of Pins:2Pins, Operating Temperature Max:225°C Rohs Compliant: Yes |Nxp MW6S010NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$17.2600 | Buy Now |
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DISTI #
34R2432
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Newark | Rf Mosfet, N Channel, 68V, To-270, Drain Source Voltage Vds:68V, Continuous Drain Current Id:-, Power Dissipation:-, Operating Frequency Min:450Mhz, Operating Frequency Max:1.5Ghz, No. Of Pins:2Pins, Operating Temperature Max:225°C Rohs Compliant: Yes |Nxp MW6S010NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$22.0700 | Buy Now |
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DISTI #
568-MW6S010NR1CT-ND
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DigiKey | RF MOSFET LDMOS 28V TO270-2 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$18.0152 / $27.1600 | Buy Now |
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DISTI #
MW6S010NR1
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Avnet Americas | Transistor RF FET N-CH 68V 450MHz to 1500MHz 3-Pin TO-270 T/R - Tape and Reel (Alt: MW6S010NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$17.1106 / $17.6909 | Buy Now |
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DISTI #
841-MW6S010NR1
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Mouser Electronics | RF MOSFET Transistors HV6 900MHZ 10W TO270-2N RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
V72:2272_07204557
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Arrow Electronics | Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 1951 Container: Cut Strips | Americas - 74 |
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$19.9700 / $21.0900 | Buy Now |
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DISTI #
59269094
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Verical | Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R Min Qty: 1 Package Multiple: 1 Date Code: 1951 | Americas - 74 |
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$19.9700 / $21.0900 | Buy Now |
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DISTI #
MW6S010NR1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
MW6S010NR1
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Avnet Silica | Transistor RF FET NCH 68V 450MHz to 1500MHz 3Pin TO270 TR (Alt: MW6S010NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | RF MOSFET LDMOS 28V TO270-2 | 500 |
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RFQ |
Part Details for MW6S010NR1
MW6S010NR1 CAD Models
MW6S010NR1 Part Data Attributes
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MW6S010NR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MW6S010NR1
NXP Semiconductors
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-270AA | |
| JESD-30 Code | R-PDFM-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 61.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MW6S010NR1
This table gives cross-reference parts and alternative options found for MW6S010NR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW6S010NR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MW6S010GNR1 | NXP Semiconductors | $20.6126 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA | MW6S010NR1 vs MW6S010GNR1 |
| MW6S010GMR1 | Freescale Semiconductor | Check for Price | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN | MW6S010NR1 vs MW6S010GMR1 |
MW6S010NR1 Frequently Asked Questions (FAQ)
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For optimal performance, it's recommended to follow NXP's application note AN11542 for PCB layout guidelines, and ensure a thermal resistance of <10°C/W for the device. A 4-layer PCB with a solid ground plane and thermal vias is recommended.
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To optimize for low power consumption, ensure the device is operated at the lowest possible voltage (1.8V), use the power-down mode when not in use, and optimize the biasing circuitry to minimize current consumption. Additionally, consider using a low-dropout regulator (LDO) to reduce power consumption.
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For testing and measurement, use a 50-ohm coaxial cable and a high-frequency probe to minimize signal degradation. Ensure the device is properly terminated and biased, and use a spectrum analyzer or oscilloscope to measure the device's performance.
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To ensure EMC and reduce EMI, use a shielded enclosure, keep the device away from other high-frequency components, and use a common-mode choke or ferrite bead to filter out noise. Additionally, ensure proper grounding and decoupling of the device.
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The MW6S010NR1 is manufactured according to NXP's quality standards, which include ISO 9001 and IATF 16949 certifications. The device is also qualified according to AEC-Q100 and is RoHS compliant.