Part Details for MW6S010GNR1 by NXP Semiconductors
Results Overview of MW6S010GNR1 by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MW6S010GNR1 Information
MW6S010GNR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MW6S010GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81K3650
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Newark | Rf Power Mosfet, Lateral N Channel Broadband, 68V, To-270-2 Gull, Drain Source Voltage Vds:68V, Continuous Drain Current Id:-, Power Dissipation:10W, Operating Frequency Min:450Mhz, Operating Frequency Max:1.5Ghz, No. Of Pins:2Pins Rohs Compliant: Yes |Nxp MW6S010GNR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$20.3600 | Buy Now |
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DISTI #
MW6S010GNR1
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Avnet Americas | RF FET Transistor, 68 VDC, 450 MHz, 1500 MHz, TO-270 - Tape and Reel (Alt: MW6S010GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$15.7870 / $16.3224 | Buy Now |
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DISTI #
841-MW6S010GNR1
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Mouser Electronics | RF MOSFET Transistors HV6 900MHZ 10W RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
MW6S010GNR1
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IBS Electronics | MW6S010GNR1 by NXP Semiconductors is a high-power RF transistor designed for wireless communications, offering 10W output power, 28V operation, and high efficiency for broadband applications. Min Qty: 500 Package Multiple: 1 | 0 |
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$19.3310 | Buy Now |
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DISTI #
MW6S010GNR1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
MW6S010GNR1
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Avnet Silica | RF FET Transistor 68 VDC 450 MHz 1500 MHz TO270 (Alt: MW6S010GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | RF MOSFET LDMOS 28V TO270-2 | 1000 |
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RFQ | |
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DISTI #
MW6S010GNR1
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EBV Elektronik | RF FET Transistor 68 VDC 450 MHz 1500 MHz TO270 (Alt: MW6S010GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MW6S010GNR1
MW6S010GNR1 CAD Models
MW6S010GNR1 Part Data Attributes
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MW6S010GNR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MW6S010GNR1
NXP Semiconductors
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, 2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-270BA | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 61.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MW6S010GNR1
This table gives cross-reference parts and alternative options found for MW6S010GNR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW6S010GNR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MW6S010NR1 | NXP Semiconductors | $21.3242 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA | MW6S010GNR1 vs MW6S010NR1 |
| MW6S010GMR1 | Freescale Semiconductor | Check for Price | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1265A-02, TO-270, 2 PIN | MW6S010GNR1 vs MW6S010GMR1 |
MW6S010GNR1 Frequently Asked Questions (FAQ)
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For optimal performance, it's recommended to follow NXP's application note AN11542 for PCB layout guidelines. Additionally, ensure good thermal management by providing adequate heat sinking and airflow around the device.
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To optimize power consumption, use the device's low-power modes (e.g., standby, sleep) whenever possible. Also, consider using a power management IC to regulate voltage and minimize power waste. Refer to the datasheet's power consumption tables for guidance.
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The recommended settings for the internal voltage regulator can be found in the datasheet's electrical characteristics table. Typically, the default settings provide optimal performance, but adjustments may be necessary based on specific application requirements.
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For troubleshooting, refer to NXP's application note AN11543 for debugging guidelines. Use tools like oscilloscopes, logic analyzers, and debug software to identify and isolate issues. Consult the datasheet and NXP's support resources for additional guidance.
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Operating the device beyond its recommended specifications can lead to reduced performance, increased power consumption, and potentially even device damage. Ensure that your application stays within the specified operating conditions to guarantee reliable operation.